HIT 2SD1209 Datasheet
2SD1209(K)
Silicon NPN Epitaxial, Darlington
Application
• Low frequency power amplifier
• Complementary pair with 2SA1193(K)
Outline
TO-92MOD
2
3
1. Emitter
2. Collector
3. Base
1
3
2
1
2SD1209(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Note: 1. Pulse test
V
(BR)CBO
CEO
EBO
FE
V
CE(sat)
V
BE(sat)
60 — — V IC = 0.1 mA, IE = 0
— — 100 µAV
— — 100 µAV
4000 — — V
— — 1.5 V IC = 500 mA, IB = 0.5 mA*
— — 2.0 V IC = 500 mA, IB = 0.5 mA*
60 V
60 V
7V
1A
2A
0.9 W
= 60 V, RBE = ∞
CE
= 7 V, IC = 0
EB
= 3 V, IC = 0.5 A*
CE
1
1
1
2
Loading...