HIT 2SD1138 Datasheet

2SD1138

Silicon NPN Triple Diffused

Application

Low frequency high voltage power amplifier TV vertical deflection output complementary pair with
2SB861

Outline

TO-220AB

1. Base

2. Collector

1

2

3

(Flange)

3. Emitter

2SD1138

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P

CBO

CEO

EBO

C

C (peak)

C

PC*

1

Junction temperature Tj 150 °C
Storage temperature Tstg –45 to +150 °C

Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdown

V

(BR)CEO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I
DC current transfer ratio h

Collector to emitter saturation

CBO

h
V

FE1

FE2

CE (sat)

voltage
Base to emitter voltage V

BE

Collector output capacitance Cob — 20 — pF VCB = 100 V, IE = 0, f = 1 MHz
Note: 1. The 2SD1138 is grouped by h

2. Pulse test.

150 — — V IC = 50 mA, RBE = ∞

6——VI

——1 µAVCB = 120 V, IE = 0

1

*

60 — 320 VCE = 4 V, IC = 50 mA
60 — — VCE = 10 V, IC = 500 mA*
— — 3.0 V IC = 500 mA, IB = 50 mA*

— — 1.0 V VCB = 4 V, IC = 50 mA

as follows.

FE1

200 V
150 V
6V
2A
5A

1.8 W
30 W

= 5 mA, IC = 0

E

2

2

BCD

60 to 120 100 to 200 160 to 320

2