HIT 2SD1137 Datasheet
2SD1137
Silicon NPN Triple Diffused
Application
Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860
Outline
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C (peak)
C
PC*
1
Junction temperature Tj 150 °C
Storage temperature Tstg –45 to +150 °C
Note: 1. Value at TC = 25°C.
100 V
100 V
4V
4A
5A
1.8 W
40 W
2SD1137
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Note: 1. Pulse test.
V
(BR)CEO
V
(BR)EBO
CEO
EBO
FE
V
CE (sat)
100 — — V IC = 10 mA, RBE = ∞
4——VI
= 1 mA, IC = 0
E
— — 100 µAVCE = 80 V, RBE = ∞
——50µAVEB = 3.5 V, IC = 0
50 — 250 VCE = 4 V IC = 0.5 A*
25 — 350 IC = 50 mA
— — 1.0 V IC = 1 A, IB = 0.1 A
1
Maximum Collector Dissipation
60
(W)
C
40
20
Collector power dissipation P
0 50 100 150
Case temperature T
Curve
(°C)
C
10
3
(A)
C
1.0
0.3
0.1
Collector current I
0.03
0.01
1 30 300100 1,000103
Area of Safe Operation
(10 V, 4 A)
DC Operation
= 25°C
T
C
Collector to emitter voltage V
(40 V, 1 A)
(100 V, 50 mA)
CE
(V)
2
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