2SD1135
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB859
Outline
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation PC*
Junction temperature Tj 150 °C
Storage temperature Tstg –45 to +150 °C
Note: 1. Value at TC = 25°C.
CBO
CEO
EBO
C
C(peak)
1
100 V
80 V
5V
4A
8A
40 W
2SD1135
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter saturation
h
V
CBO
FE1
FE2
BE
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 40 — pF VCB = 20 V, IE = 0, f = 1 MHz
Notes: 1. The 2SD1135 is grouped by h
2. Pulse test.
BC
60 to 120 100 to 200
80 — — V IC = 50 mA, RBE = ∞
5——VI
= 10 µA, IC = 0
E
— — 0.1 mA VCB = 80 V, IE = 0
1
*
60 — 200 VCE = 5 V, IC = 1 A*
35 — — VCE = 5 V, IC = 0.1 A*
— — 1.5 V VCE = 5 V, IC = 1 A*
——2VI
= 2 A, IB = 0.2 A*
C
— 10 — MHz VCE = 5 V, IC = 0.5 A*
as follows.
FE1
2
2
2
2
2
Maximum Collector Dissipation Curve
60
40
20
Collector power dissipation Pc (W)
0 50 100 150
Case temperature T
(°C)
C
Area of Safe Operation
(A)
C
1.0
5
IC
(Continuous)
max
2
(10 V, 4 A)
DC Operation
(T
C
= 25°C)
0.5
0.2
Collector current I
0.1
(80 V, 0.06 A)
0.05
1 2 5 10 20 50 100
Collector to emitter voltage V
(33 V, 1.2 A)
(V)
CE
2