HIT 2SD1126-K Datasheet
2SD1126(K)
Silicon NPN Triple Diffused
Application
Power switching
Outline
TO-220AB
1.5 kΩ
(Typ)
130 Ω
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
I
D
2SD1126(K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
120 V
Collector to emitter voltage V
CEO
120 V
Emitter to base voltage V
EBO
7V
Collector current I
C
10 A
Collector peak current I
C(peak)
15 A
Collector power dissipation PC*
1
50 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
C to E diode forward current I
D
10 A
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120 — — V IC = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7——VI
E
= 200 mA, IC = 0
Collector cutoff current I
CBO
— — 100 µAV
CB
= 120 V, IE = 0
I
CEO
——10µAV
CE
= 100 V, RBE = ∞
DC current transfer ratio h
FE
1000 — 2000 VCE = 3 V, IC = 5 A*
1
Collector to emitter saturation V
CE(sat)1
— — 1.5 V IC = 5 A, IB = 10 mA*
1
voltage V
CE(sat)2
— — 3.0 V IC = 10 A, IB = 0.1 A*
1
Base to emitter saturation V
BE(sat)1
— — 2.0 V IC = 5 A, IB = 10 mA*
1
voltage V
BE(sat)2
— — 3.5 V IC = 10 A, IB = 0.1 A*
1
C to E diode forward voltage V
D
— — 3.0 V ID = 10 A*
1
Turn on time t
on
— 0.8 — µsI
C
= 5 A, IB1 = –IB2 = 10 mA
Turn off time t
off
— 8.0 — µs
Note: 1. Pulse test.
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