HIT 2SD1113-K Datasheet
2SD1113(K)
Silicon NPN Triple Diffused
Application
Igniter
Outline
TO-220AB
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
6 kΩ
(Typ)
450 Ω
(Typ)
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
300 V
Collector to emitter voltage V
CEO
300 V
Emitter to base voltage V
EBO
7V
Collector current I
C
6A
Collector peak current I
C(peak)
10 A
Collector power dissipation PC*
1
40 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SD1113(K)
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
300 — 500 V IC = 0.1 mA, IE = 0
Collector to emitter sustain
voltage
V
CEO(sus)
300 — — V IC = 3 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
Emitter to base breakdown
voltage
V
(BR)EBO
7——VI
E
= 50 mA, IC = 0
Collector cutoff current I
CEO
— — 100 µAV
CE
= 300 V, RBE = ∞
DC current transfer ratio h
FE
500 — — VCE = 2 V, IC = 4 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
— — 1.5 V IC = 4 A, IB = 40 mA*
1
Base to emitter saturation
voltage
V
BE(sat)
— — 2.0 V IC = 4 A, IB = 40 mA*
1
Turn on time t
on
— 2.0 — µsI
C
= 4 A, IB1 = –IB2 = 40 mA
Turn off time t
off
—23—µsI
C
= 4 A, IB1 = –IB2 = 40 mA
Note: 1. Pulse test.
0 50 100 150
Case temperature T
C
(°C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
20
40
60
0.005
0.01
0.1
1.0
50
10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
0.5 1.0 2 5 10 20 50 100200 500
Area of Safe Operation
iC
(peak)
IC
(max)
PW = 10 ms
PW = 1 ms
DC Operation
Ta = 25°C
1 shot pulse
Loading...