HIT 2SD1101 Datasheet
Application
• Low frequency amplifier
• Complementary pair with 2SB831
Outline
MPAK
2SD1101
Silicon NPN Epitaxial
3
1
2
1. Emitter
2. Base
3. Collector
2SD1101
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
CBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Base to emitter voltage V
BE
Notes: 1. The 2SD1101 is grouped by hFE as follows.
2. Pulse test
Grade B C
Mark AB AC
h
FE
85 to 170 120 to 240
25 — — V IC = 10 µA, IE = 0
20 — — V IC = 1 mA, RBE = ∞
5——VI
— — 1.0 µAV
1
85 — 240 V
— — 0.5 V IC = 0.5 A, IB = 0.05 A*
— — 1.0 V V
25 V
20 V
5V
0.7 A
1A
150 mW
= 10 µA, IC = 0
E
= 20 V, IE = 0
CB
= 1 V, IC = 0.15 A*
CE
= 1 V, IC = 0.15 A*
CE
2
2
2
See characteristic curves of 2SD467.
2
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