HIT 2SC5545 Datasheet
Silicon NPN Epitaxial
VHF / UHF wide band amplifier
Features
• Excellent inter modulation characteristic
• High power gain and low noise figure ;
PG=16dB typ. , NF=1.1dB typ. at f=900MHz
Outline
MPAK-4
2SC5545
ADE-208-746 (Z)
1st. Edition
Jan. 1999
Note: Marking is “ZS-”.
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
2SC5545
C
C
C
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
CBO
CEO
EBO
C
Collector power dissipation Pc 150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
CEO
EBO
FE
Collector output capacitance Cob — 0.69 1.1 pF V
Gain bandwidth product f
T
Power gain PG 14 16 — dB V
Noise figure NF — 1.1 2.0 dB V
15——V I
——1 µAV
——1 mAV
——10µAV
80 120 160 V VCE = 3V , IC = 20mA
10 12.6 — GHz VCE = 3V , IC = 20mA
15 V
6V
1.5 V
50 mA
= 10µA , IE = 0
C
= 12V , IE = 0
CB
= 6V , RBE = Åá
CE
= 1.5V , IC = 0
EB
= 3V , IE = 0
B
f = 1MHz
= 3V, IC = 20mA
E
f = 900MHz
= 3V, IC = 5mA
E
f = 900MHz
2
Main Characteristics
2SC5545
Maximum Collector Dissipation Curve
200
150
100
50
Collector Power Dissipation Pc (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Collector Output Capacitance vs.
2.0
1.6
Collector to Base Voltage
I = 0
E
f = 1MHz
DC Current Transfer Ratio vs.
200
FE
Collector Current
100
DC Current Transfer Ratio h
0
10
25
1
20
Collector Current I (mA)
Gain Bandwidth Product vs.
20
Collector Current
16
T
V = 3 V
CE
50
C
V = 3 V
CE
100
1.2
0.8
0.4
0
0.2 0.5 2
0.1 1 10
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
5
CB
12
8
4
0
Gain Bandwidth Product f (GHz)
12 5
Collector Current I (mA)
10 20
C
50 100
3
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