HIT 2SC5390 Datasheet
2SC5390
Silicon NPN Epitaxial
High Frequency Amplifier
Features
• Excellent high frequency characteristics
fT = 1.4GHz (typ.)
• Low output capacitance
Cob = 2.4 pF (typ.)
• Isolated package
TO–126FM
ADE-208-492 (Z)
1st. Edition
December. 1996
Outline
TO–126FM
1
2
3
1. Emitter
2. Collector
3. Base
2SC5390
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P
Collector power dissipation PC*
CBO
CEO
EBO
C
c(peak)
C
1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Collector to base breakdown
voltage
Collector to emitter
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter saturation
voltage
Gain bandwidth product f
Collector Output capacitance C
V
(BR)CBO
V
(BR)CEO
CBO
EBO
FE
BE
V
CE(sat)
T
ob
110 — — V IC = 10É A, IE = 0
110 — — V IC = 1mA, RBE = ∞
——10µAV
——10µAV
30 — 100 VCE = 10 V, IC = 10mA
——1 V V
——1 V I
1.0 1.4 — GHz VCE = 10 V, IC = 50mA
— 2.4 3.5 pF VCB = 30V, I
110 V
110 V
3V
200 mA
400 mA
1.4 W
7W
= 100V, IE = 0
CB
= 3V, IC = 0
E B
= 10 V, IC = 10mA
CE
= 200mA, IB = 20mA
C
= 0
E
f = 1MHz
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