Silicon NPN Epitaxial Planar
Application
VHF amplifier, mixer, local oscillator
Outline
TO-92 (2)
2SC535
1. Emitter
2. Collector
3. Base
3
2
1
2SC535
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
30 V
20 V
4V
20 mA
100 mW
2
2SC535
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
CBO
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter saturation
V
BE
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 0.9 1.2 pF VCB = 10 V, IE = 0, f = 1 MHz
Power gain PG 17 20 — dB VCE = 6 V, IC = 1 mA,
Noise figure NF — 3.5 5.5 dB VCE = 6 V, IC = 1 mA,
Input admittance (typ) yie 1.3 + j5.3 mS VCE = 6 V, IC = 1 mA,
Reverse transfer admittance
yre –0.078 – j0.41 mS
(typ)
Foward transfer admittance
yfe 32 – j10 mS
(typ)
Output admittance (typ) yoe 0.08 + j0.82 mS
Note: 1. The 2SC535 is grouped by hFE as follows.
BC
60 to 120 100 to 200
30 — — V IC = 10 µA, IE = 0
20 — — V IC = 1 mA, RBE = ∞
4——VI
— — 0.5 µAV
1
60 — 200 VCE = 6 V, IC = 1 mA
= 10 µA, IC = 0
E
= 10 V, IE = 0
CB
— 0.72 — V VCE = 6 V, IC = 1 mA
— 0.17 — V IC = 20 mA, IB =4 mA
450 940 — MHz VCE = 6 V, IC = 5 mA
f = 100 MHz
f = 100 MHz, R
f = 100 MHz
= 50 Ω
g
3
2SC535
Maximum Collector Dissipation Curve
150
(mW)
C
100
50
Collector power dissipation P
0 50 150100
Ambient Tmperature Ta (°C)
Typical Output Characteristics
5
4
(mA)
C
3
2
50
40
30
20
FE
(mA)
Collector Current I
120
VCE = 6 V
100
80
60
40
Typical Output Characteristics
20
16
C
12
8
300
275
250
225
200
175
150
125
75
100
P
C
50
4
25 µA
IB = 0
04 1612
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
= 100 mW
208
1
Collector Current I
0 4 12 208
Collector to Emitter Voltage V
10µA
IB = 0
16
CE
(V)
20
DC Current Transfer ratio h
0
0.1 0.5 1050.2 2 201.0
Collector Current I
(mA)
C
4