HIT 2SC5273 Datasheet
Application
High voltage amplifier
Features
• High brakedown voltage
V
= 1300 V min
(BR)CEO
Outline
2SC5273
Silicon NPN Triple Diffused
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
3. Emitter
2SC5273
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector cutoff current I
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation
V
CES
CEO
EBO
FE
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 3.4 — pF VCB = 100 V, IE = 0, f = 1 MHz
——10µAVCE = 1300 V, RBE = 0
— — 100 µAVCE = 1300 V, RBE = ∞
——10µAVEB = 6 V, IC = 0
10 — — VCE = 10 V, IC = 10 mA
— — 5.0 V IC = 10 mA, IB = 2 mA
— 5.5 — MHz VCE = 20 V, IC = 1 mA
1300 V
1300 V
6V
30 mA
60 mA
1.8 W
2
2SC5273
Maximum Collector Power
Dissipation Curve
4
3
2
1
Collector Power Dissipation Pc (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
1.8 mA 1.6 mA
20
2.0 mA
1.4 mA
1.2 mA
1.0 mA
100
Area of Safe Operation
ic(peak)
50
I max
C
C
20
(Tc = 25°C)
Pw = 1 ms
10 ms
DC Operation
10
0.5
Collector Current I (mA)
0.2
1 shot pulse
Ta = 25 °C
0.1
100 200 500 1000 2000 5000
Collector to Emitter Voltage V (V)
CE
DC Current Transfer Ratio vs.
Collector Current
100
FE
50
25 °C
75 °C
C
0.8 mA
0.6 mA
10
0.4 mA
20
10
5
0.2 mA
Collector Current I (mA)
Pulse Test
Ta = 25 °C
I = 0
B
0510
Collector to Emitter Voltage V (V)
CE
2
DC Current Transfer Ratio h
1
0.1
Ta = –25 °C
Pulse Test
V = 5 V
CE
1 3 10 300.3
Collector Current I (mA)
C
3
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