HIT 2SC5252 Datasheet
2SC5252
Silicon NPN Triple Diffused Planar
Application
Character display horizontal deflection output
Features
High breakdown voltage
•
V
= 1500 V
CBO
High speed switching
•
t
≤ 0.15 µsec(typ.)
f
Isolated package
•
TO–3P•FM
ADE-208-391A (Z)
2nd. Edition
Outline
TO-3PFM
1. Base
2. Collector
3. Emitter
1
2
3
2SC5252
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
C
C(peak)
Collector power dissipation PC*
CBO
CEO
EBO
1
1500 V
800 V
6V
15 A
30 A
50 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CEO
800 — — V IC = 10 mA, RBE = ∞
voltage
Emitter to base breakdown
V
(BR)EBO
6——VI
= 10 mA, IC = 0
E
voltage
Collector cutoff current I
DC current transfer ratio h
DC current transfer ratio h
Collector to emitter saturation
V
CES
FE1
FE2
CE(sat)
— — 500 µA VCE = 1500 V, RBE = 0
8—35 V
3—6 V
——5VI
= 5 V, IC = 1 A
CE
= 5 V, IC = 8 A
CE
= 10 A, IB = 3 A
C
voltage
Base to emitter saturation
V
BE(sat)
— — 1.5 V IC = 10 A, IB = 3 A
voltage
Fall time t
f
— 0.15 0.3 µsec ICP = 7 A, IB1 = 2 A, fH = 31.5 kHz
2
Collector Power Dissipation
80
60
40
20
Collector Power Dissipation Pc (W)
0
vs. Case Temperature
50 100 150 200
Case Temperature Tc (°C)
2SC5252
50
40
C
30
20
10
Collector Current I (A)
0
Collector to Emitter Voltage V (V)
Areaof Safe Operaion
I = –1 A
L = 180 µH
duty < 1 %
(400 V, 30 A)
(600 V, 8 A)
(800 V, 4 A)
400 800 1200 1600
Tc = 25°C
(1500 V, 0.5 mA)
B1
2000
CE
3
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