HIT 2SC5246 Datasheet
2SC5246
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 12 GHz typ
• High gain, low noise figure
PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz
ADE-208-264
1st. Edition
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC5246
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: Marking is “ZC–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.3 0.8 pF VCB = 5 V, IE = 0,
Gain bandwidth product f
T
Power gain PG 14 16.5 — dB VCE = 5 V, IC = 10 mA,
Noise figure NF — 1.6 2.5 dB VCE = 5 V, IC = 5 mA,
——10µAVCB = 15 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 100 160 VCE = 5 V, IC = 10 mA
9 12 — GHz VCE = 5 V, IC = 5 mA
15 V
8V
1.5 V
20 mA
80 mW
= 8 V, RBE = ∞
CE
f = 1 MHz
f = 900 MHz
f = 900 MHz
2
Collector Power Dissipation Curve
160
120
80
200
FE
160
120
2SC5246
DC Current Transfer Ratio vs.
Collector Current
80
40
Collector Power Dissipation Pc (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
20
16
T
12
8
Collector Current
V = 5V
CE
1 V
4
Gain Bandwidth Product f (GHz)
0
1
251020 50 100
Collector Current I (mA)
C
40
V = 5 V
0
0.01
CE
Pulse Test
0.1
1 10 100
Collector Current I (mA)
C
DC Current Transfer Ratio h
Collector Output Capacitance vs.
1.0
Collector to Base Voltage
I = 0
E
f = 1 MHz
0.8
0.6
0.4
0.2
0
Collector Output Capacitance Cob (pF)
0.1 0.2 0.5 1 2 5 10 20
Collector to Base Voltage V (V)
CB
3
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