HIT 2SC5225 Datasheet

2SC5225
Silicon NPN Epitaxial Transistor
Application
Wide band video output amplifier for color CRT monitor.
High frequency high voltage amplifier.
High speed power switching.
Features
High voltage large current operation.
V
= 80 V, IC = 300 mA
CEO
High fT.
fT = 1.4 GHz
Small output capacitance.
Cob = 3 pF
ADE-208-393
1st. Edition
2SC5225
Outline
TO-92 (1)
3
2
1
Absolute Maximum Ratings (Ta = 25°C)
1. Emitter
2. Collector
3. Base
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector power dissipation P
CBO
CEO
EBO
C
C
100 V 80 V 3V 300 mA
625 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
2
2SC5225
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage Collector to emitter breakdown
V
(BR)CEO
voltage Collector to base cutoff current I Emitter to base cutoff current I DC current transfer ratio h
Gain bandwidth product f
CBO
EBO
FE
T
Emitter input capacitance Cib 13 19 pF VEB = 0, IC = 0, f = 1 MHz Collector output capacitance Cob 3 4 pF VCB = 10 V, IE = 0, f = 1 MHz
Collector Power Dissipation Curve
1000
800
100 V IC = 100 µA, IE = 0
80——V I
= 1 mA, RBE =
C
——1 µAVCB = 80 V, IE = 0 ——10µAVEB = 3 V, IC = 0 20 70 VCE = 5 V, IC = 50 mA
Pulse test
1.2 1.4 GHz VCE = 10 V, IC = 50 mA
DC Current Transfer Ratio vs.
Collector Current
100
V = 5V
FE
CE
50
600
400
200
Collector Power Dissipation Pc (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
20
DS Current Transfer Ratio h
10
1 2 5 10 20 50 100200 500
Collector Current I (mA)
C
3
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