HIT 2SC5137 Datasheet
2SC5137
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 10 GHz typ
• High gain, low noise figure
PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz
ADE-208-224
1st. Edition
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC5137
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: Marking is “YA–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.45 0.8 pF VCB = 5 V, IE = 0,
Gain bandwidth product f
T
Power gain PG 12 16.5 — dB VCE = 5 V, IC = 10 mA,
Noise figure NF — 1.5 2.5 dB VCE = 5 V, IC = 5 mA,
——10µAVCB = 15 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 120 250 VCE = 5 V, IC = 10 mA
7 10 — GHz VCE = 5 V, IC = 10 mA
15 V
8V
1.5 V
20 mA
80 mW
= 8 V, RBE = ∞
CE
f = 1 MHz
f = 900 MHz
f = 900 MHz
2
Maximum Collector Dissipation Curve
160
120
80
200
FE
160
120
80
2SC5137
DC Current Transfer Ratio vs.
Collector Current
V = 5 V
CE
Pulse Test
40
Collector Power Dissipation Pc (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
20
16
T
12
Collector Current
V = 5V
CE
8
4
Gain Bandwidth Product f (GHz)
0
V = 1V
CE
12 51020
Collector Current I (mA)
C
50
40
DC Current Transfer Ratio h
0
0.1 1 10 50
Collector Current I (mA)
C
Collector Output Capacitance vs.
1.0
0.8
Collector to Base Voltage
I = 0
E
f = 1 MHz
0.6
0.4
0.2
Collector Output Capacitance Cob (pF)
0
0.1 0.2 0.5 1 2 5 10 20
Collector to Base Voltage V (V)
CB
3
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