HIT 2SC5081 Datasheet

2SC5081

Silicon NPN Epitaxial

Application

VHF / UHF wide band amplifier

Features

• High gain bandwidth product

fT = 13.5 GHz Typ

• High gain, low noise figure

PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz

Outline

CMPAK–4

2

3

1

4

1. Collector

2. Emitter

3. Base

4. Emitter

2SC5081

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector cutoff current I

Emitter cutoff current I
DC current transfer ratio h

CBO

I

CEO

EBO

FE

Collector output capacitance Cob — 0.4 0.75 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f

T

Power gain PG 15 18 — dB VCE = 5 V, IC = 20 mA,

Noise figure NF — 1.1 2.0 dB VCE = 5 V, IC = 5 mA,

Note: Marking is “ZD–”.

15——V I

——1 µAVCB = 12 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 90 160 VCE = 5 V, IC = 20 mA

10.5 13.5 — GHz VCE = 5 V, IC = 20 mA

15 V
8V

1.5 V
50 mA
100 mW

= 10 µA, IE = 0

C

= 8 V, RBE = ∞

CE

f = 900 MHz

f = 900 MHz

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

See characteristic curves of 2SC5080.

2