2SC5080
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 13.5 GHz Typ
• High gain, low noise figure
PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK-4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
2SC5080
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.4 0.75 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
T
Power gain PG 15 18 — dB VCE = 5 V, IC = 20 mA,
Noise figure NF — 1.1 2.0 dB VCE = 5 V, IC = 5 mA,
Note: Marking is “ZD–”.
15——V I
——1 µAVCB = 12 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 90 160 VCE = 5 V, IC = 20 mA
10.5 13.5 — GHz VCE = 5 V, IC = 20 mA
15 V
8V
1.5 V
50 mA
150 mW
= 10 µA, IE = 0
C
= 8 V, RBE = ∞
CE
f = 900 MHz
f = 900 MHz
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
2SC5080
Maximum Collector Dissipation Curve
150
(mW)
C
100
50
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
Collector Current
20
16
T
V = 5V
CE
DC Current Transfer Ratio vs.
Collector Current
200
V = 5V
FE
160
CE
120
80
40
DC Current Transfer Ratio h
0
15010050
0.1
1 10 100
Collector Current I (mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
5
I = 0
E
f = 1 MHz
2
12
V = 1V
8
CE
4
Gain Bandwidth Product f (GHz)
0
12 51020
Collector Current I (mA)
C
50
1
0.5
0.2
Collector Output Capacitance Cob (pF)
0.1
0.1 0.2 0.5 1 2 5 10 20
Collector to Base Voltage V (V)
CB
3