HI-SINCERITY HJ6668 Service Manual
HI-SINCERITY
MICROELECTRONICS CORP.
HLB121A
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121A is a medium power transistor designed for use in switching
applications.
Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
Absolute Maximum Ratings
Spec. No. : HA200112
Issued Date : 2001.04.01
Revised Date : 2005.02.05
Page No. : 1/4
TO-92
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction T e mperature.................................................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (T
Total Power Dissipation (T
=25°C)...................................................................................................................... 1 W
A
=25°C).................................................................................................................... 10 W
C
• Maximum Voltages and Currents
BV
Collector to Base Voltage....................................................................................................................... 600 V
CBO
BV
Collector to Emitter Voltage.................................................................................................................... 400 V
CEO
Emitter to Base Voltage.............................................................................................................................. 6 V
BV
EBO
I
Collector Current (DC) ............................................................................................................................... 300 mA
C
I
Collector Current (Pulse)............................................................................................................................ 600 mA
C
I
Base Current (DC)........................................................................................................................................ 40 mA
B
I
Base Current (Pulse).................................................................................................................................. 100 mA
B
Electrical Characteristics (T
=25°C)
A
Symbol Min. Typ. Max. Unit Test Conditions
BV
BV
BV
*V
*V
*V
CBO
CEO
EBO
I
CBO
I
CEO
I
EBO
CE(sat)1
CE(sat)2
BE(sat)
*h
FE1
*h
FE2
600 - - V IC=100uA
400 - - V IC=10mA
6--VI
=10uA
E
- - 10 uA VCB=550V
- - 10 uA VCB=400V
- - 10 uA VEB=6V
- - 400 mV IC=50mA, IB=10mA
- - 750 mV IC=100mA, IB=20mA
--1VI
8-- V
=50mA, IB=10mA
C
=10V, IC=10mA
CE
10 - 36 VCE=10V, IC=50mA
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HLB121A HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HA200112
Issued Date : 2001.04.01
Revised Date : 2005.02.05
Page No. : 2/4
100
75oC
125oC
25oC
10
hFE
hFE @ VCE=10V
1
0.1 1 10 10 0 1000
Collector Current-IC (mA)
Sat urati on Voltage & Col lector C urrent
1000
25oC
Current Gain & Collector Current
100000
Sat urati on Voltage & Collector Current
CE(sat)
V
10000
1000
Saturation Voltage (mV)
100
10
0.1 1 10 100 1000
1200
1000
800
B
@ IC=5I
125oC
Collector Current-IC (mA)
Power Derating
75oC
25oC
75oC125oC
Saturation Voltage (mV)
100
0.1 1 10 100 1000
Collector Current-IC (mA)
BE(sat)
V
@ IC=5I
Safe Operating Area
1
(A)
C
0.1
Collect or Curren t-I
PT=1mS
PT=100mS
PT=1S
600
400
B
PD(mW),Power Dissipation
200
0
0 20 40 60 80 100 120 140 160
Ta(oC), Ambtient Temperatuer
0.01
1 10 100 1000
Forwar d Vol t a ge- VCE (V)
HLB121A HSMC Product Specification
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