
查询H2N6427供应商
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.15
Page No. : 1/3
H2N6427
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Transistor
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e........................................................................................ 40 V
VCES Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage ........................................................................................... 12 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=100uA, IE=0
BVCES 40 - - V IC=10uA, IB=0
BVEBO 12 - - V IE=10uA, IC=0
ICBO - - 50 nA VCB=30V, IE=0
IEBO - - 50 nA VEB=10V, IC=0
ICES - - 1 uA VCE=25V, VBE=0
*VCE(sat)1 - 0.71 1.2 V IC=50mA, IB=0.5mA
*VCE(sat)2 - 0.9 1.5 V IC=500mA, IB=0.5mA
*VBE(sat) - 1.52 2.0 V IC=500mA, IB=0.5mA,
VBE(on) - 1.24 1.75 V VCE=5V, IC=50mA
*hFE1 10 - 100 K VCE=5V, IC=10mA
*hFE2 20 - 200 K VCE=5V, IC=100mA
*hFE3 14 - 140 K VCE=5V, IC=500mA
Cob - 5.4 7 pF VCB=10V, f=1MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.15
Page No. : 2/3
100k
10k
hFE
1k
1 10 100 1000
10000
Current Gain & Collector Current
hFE @ VCE=5V
Collector Current (mA)
On Voltage & Collector Current
10000
1000
Saturation Voltage (mV)
100
100
Saturation Volt age & Col lector C ur rent
BE(sat)
V
@ IC=1000I
1 10 100 1000
B
CE(sat)
V
@ IC=1000I
CE(sat)
V
Collector Current (mA)
B
@ IC=100I
Capacit an ce & R everse-Biased Voltage
B
1000
On Voltage (mV)
100
1 10 100 1000
BE(on)
V
@ VCE=5V
Collector Current (mA)
Safe Operating Area
10000
PT=1ms
(mA)
C
Collector Current-I
PT=100ms
1000
PT=1s
100
10
10
Capac itance (pF)
1
0.1 1 10 100
Reverse- Biased Vol tage (V)
Cob
PD-Ta
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
1
1 10 100
Forwar d Voltage- VCE (V)
0
0 20 40 60 80 100 120 140 160
Ambient Tem p er at ure- Ta(oC)
HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.15
Page No. : 3/3
α
2
Marking :
C
B
31
2
α
3
HSMC Logo
Part Number
Date Code
HSMC Logo
D
Part Number
H
α
I
1
G
Style : Pin 1.Emitter 2.Base 3.Collec tor
Product Series
Rank
Laser Mark
Product Series
Ink Mark
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code : A
DIM
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your l ocal HSMC sal es office.
1
α
2
α
3
α
-
-
-
*5
*2
*2
°
°
°
-
-
-
*:Typical
*5
°
*2
°
*2
°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification