HI-SINCERITY H2N6427 DATA SHEET
查询H2N6427供应商
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.15
Page No. : 1/3
H2N6427
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Transistor
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e........................................................................................ 40 V
VCES Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage ........................................................................................... 12 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=100uA, IE=0
BVCES 40 - - V IC=10uA, IB=0
BVEBO 12 - - V IE=10uA, IC=0
ICBO - - 50 nA VCB=30V, IE=0
IEBO - - 50 nA VEB=10V, IC=0
ICES - - 1 uA VCE=25V, VBE=0
*VCE(sat)1 - 0.71 1.2 V IC=50mA, IB=0.5mA
*VCE(sat)2 - 0.9 1.5 V IC=500mA, IB=0.5mA
*VBE(sat) - 1.52 2.0 V IC=500mA, IB=0.5mA,
VBE(on) - 1.24 1.75 V VCE=5V, IC=50mA
*hFE1 10 - 100 K VCE=5V, IC=10mA
*hFE2 20 - 200 K VCE=5V, IC=100mA
*hFE3 14 - 140 K VCE=5V, IC=500mA
Cob - 5.4 7 pF VCB=10V, f=1MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.15
Page No. : 2/3
100k
10k
hFE
1k
1 10 100 1000
10000
Current Gain & Collector Current
hFE @ VCE=5V
Collector Current (mA)
On Voltage & Collector Current
10000
1000
Saturation Voltage (mV)
100
100
Saturation Volt age & Col lector C ur rent
BE(sat)
V
@ IC=1000I
1 10 100 1000
B
CE(sat)
V
@ IC=1000I
CE(sat)
V
Collector Current (mA)
B
@ IC=100I
Capacit an ce & R everse-Biased Voltage
B
1000
On Voltage (mV)
100
1 10 100 1000
BE(on)
V
@ VCE=5V
Collector Current (mA)
Safe Operating Area
10000
PT=1ms
(mA)
C
Collector Current-I
PT=100ms
1000
PT=1s
100
10
10
Capac itance (pF)
1
0.1 1 10 100
Reverse- Biased Vol tage (V)
Cob
PD-Ta
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
1
1 10 100
Forwar d Voltage- VCE (V)
0
0 20 40 60 80 100 120 140 160
Ambient Tem p er at ure- Ta(oC)
HSMC Product Specification
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