HE AM2302 Schematics

AM2302

AM2302

AM2302AM2302

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET

Features

Features

FeaturesFeatures

◆ Advanced trench process techology

◆ High Density Cell Design Ultra Low On-Resistance

◆ Fully Characterized Avalanche Voltage and Current

◆ Excellent Thermal and Electrical capabilities

◆ Surface Mount Device【SOT-23】

◆ Case Material : Molded Plastic【UL Flammability Classfication Rating 94V-0 】

Pin Assignments

Pin Assignments Block Diagram

Pin AssignmentsPin Assignments

Block Diagram

Block DiagramBlock Diagram

Package Outline

Package Outline

Package OutlinePackage Outline

PACKAGE OUTLINE

PACKAGE OUTLINE

PACKAGE OUTLINE PACKAGE OUTLINE

Absolute Maximum Ratings

Absolute Maximum Ratings【【【【TA

Absolute Maximum RatingsAbsolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Power Dissipation

Continuous Drain Current

Pulse Drain Current 8

Thermal Resistance Junction to Air 145 ℃ /W

Operation Junction Tempreture － 55 to ＋ 150 ℃

Storage Tempreture Range

TA====25

TATA

TA=25℃

TA=75℃

25℃℃℃℃】】】】

2525

Symbol

V

DS

V

GS

P

D

I

D

I

DM

R

θJA

T

J

T

S

Value

20 V

±8

0.9

0.57

2.8 A

－ 55 to ＋ 150

Unit

V

W

A

℃

AM2302

=0Vdc

=2.8Adc

=2.0Adc

250

AM2302

AM2302AM2302

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET

Electrical Characteristics

Electrical Characteristics

Electrical CharacteristicsElectrical Characteristics

Parameter

Static

Static

StaticStatic

Drain-Source Breakdown Voltage【VGS=0Vdc, ID=

Gate-Threshold Voltage【VDS=V

Gate-body Leakage【VDS=0Vdc, VGS=±8Vdc】

Zero Gate Voltage Drain Current
Gate Resistance

Drain-Source On-Resistance

Forward Transcondutance

Dynamic

Dynamic

DynamicDynamic

Total Gate Charge

Gate- Source Charge

Gate- Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

=250uAdc】

GS, ID

VDS=9.6V,V

VGS=4.5Vdc,I

VGS=2.5Vdc,I

VDS=5.0Vdc,
ID=4.0Adc

VDS=6.0VVdc,

ID=2.8A,

VGS=4.5Vdc ,

VDS=6.0Vdc,

VGS=0Vdc ,

F=1M

GS

D

D

HZ

VBR（DSS）

V

TTH

γDS（ON）

Symbol Min Typ Max Units

20 _ _ Vdc

（GS）

I

GSS

I

DSS

R

G

G

FS

Q

G

Q

GS

Q

GD

C

ISS

C

OSS

C

γSS

0.65 0.95 1.20 Vdc

_ _ ±100 nAdc

_ _ -1.0 uAdc

- - _

_ 40 60

_ 50 115

6.5 S

_ 3.69

0.70

_ 1.06

_ 427.12

_ 80.56

_ 57.00

- nC

mΩ

pF

Turn-On Delay Time

VDD=6.0Vdc,

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Source Drain Diode

Source Drain Diode

Source Drain DiodeSource Drain Diode

Maximum Forward Current

Diode Forward Current

■ SWITCHING TEST CIRCUIT

■ SWITCHING TEST CIRCUIT ■ SWITCHING WAVEF0RMS

■ SWITCHING TEST CIRCUIT■ SWITCHING TEST CIRCUIT

VGEN=4.5Vdc ,

ID=1.0A,RL=6.0Ω,

R

=6.0Ω

GEN

IS=0.75A, VGS=0V

t

（ON）

d

t

γ

t

（

OFF

V

）

t

γ

I

S

SD

d

■ SWITCHING WAVEF0RMS

■ SWITCHING WAVEF0RMS■ SWITCHING WAVEF0RMS

_ 6.16

_ 4.07

7.56

nS

16.61

2.4 A

0.8 1.2 V