HARRIS Semiconductor RFM12N18, RFM12N20, RFP12N18, RFP12N20 Service Manual

/

/

/

/

/

查询RFM12N18供应商

Semiconductor

September 1998

RFM12N18, RFM12N20,

RFP12N18, RFP12N20

12A, 180V and 200V, 0.250 Ohm,

N-Channel Power MOSFETs

[ /Title
(RFM12
N18,
RFM12
N20,
RFP12N
18,
RFP12N

20)
Subject

(12A,
180V
and
200V,

0.250

Ohm, N­Channel
Power
MOS­FETs)

Author

()

Key-

words
(Harris
Semi­conduc­tor, N­Channel
Power
MOS­FETs,
TO­204AA,
TO­220AB)

Creator

()

DOCIN

Features

• 12A, 180V and 200V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.250Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

RFM12N18 TO-204AA RFM12N18
RFM12N20 TO-204AA RFM12N20
RFP12N18 TO-220AB RFP12N18
RFP12N20 TO-220AB RFP12N20

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA JEDEC TO-220AB

DRAIN
(FLANGE)

GATE (PIN 1)

SOURCE (PIN 2)

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir­cuits.

Formerly developmental type TA09293.

Symbol

D

G

S

SOURCE

DRAIN

(TAB)

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 1461.2

RFM12N18, RFM12N20, RFP12N18, RFP12N20

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFM12N18 RFM12N20 RFP12N18 RFP12N20 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1mΩ) (Note 1). . . . . . . . . . . . . . . V

DSS

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DM

GS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

pkg

180 200 180 200 V
180 200 180 200 V

D

12
30

12
30

12

30
±20 ±20 ±20 ±20 V
100

D

0.8

100

0.8

75

0.6

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300

L

260

300
260

300
260

12
30

75

0.6

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFM12N18, RFP12N18 180 - - V

RFM12N20, RFP12N20 200 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

DSS, VGS

= 0V,

--25µA

TC = 125oC

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

GSS

VGS = ±20V, VDS = 0V - - ±100 nA

= 12A, VGS = 10V, (Figures 6, 7) - - 0.250 Ω
= 12A, VGS = 10V - - 3.0 V

= 100V, I
RL = 16.5Ω, VGS = 10V,

r

(Figures 10, 11, 12)

≈ 6A, R

D

= 50Ω,

G

-3550ns

- 130 200 ns

- 120 180 ns

f

VDS = 25V, VGS = 0V, f = 1MHz,

ISS

(Figure 9)

OSS
RSS

RFM12N18, RFM12N20 - - 1.25oC/W

θJC

- 105 160 ns

- - 1700 pF

- - 600 pF

- - 300 pF

RFP12N18, RFP12N20 - - 1.67oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

NOTE:

2. Pulsed: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

ISD = 6A - - 1.4 V

SD

ISD = 4A, dISD/dt = 100A/µs - 325 - ns

rr

5-2