HARRIS Semiconductor RFM12N18, RFM12N20, RFP12N18, RFP12N20 Service Manual

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查询RFM12N18供应商

Semiconductor

September 1998

RFM12N18, RFM12N20,

RFP12N18, RFP12N20

12A, 180V and 200V, 0.250 Ohm,

N-Channel Power MOSFETs

[ /Title
(RFM12
N18,
RFM12
N20,
RFP12N
18,
RFP12N

20)
Subject

(12A,
180V
and
200V,

0.250

Ohm, N­Channel
Power
MOS­FETs)

Author

()

Key-

words
(Harris
Semi­conduc­tor, N­Channel
Power
MOS­FETs,
TO­204AA,
TO­220AB)

Creator

()

DOCIN

Features

• 12A, 180V and 200V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.250Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

RFM12N18 TO-204AA RFM12N18
RFM12N20 TO-204AA RFM12N20
RFP12N18 TO-220AB RFP12N18
RFP12N20 TO-220AB RFP12N20

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA JEDEC TO-220AB

DRAIN
(FLANGE)

GATE (PIN 1)

SOURCE (PIN 2)

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir­cuits.

Formerly developmental type TA09293.

Symbol

D

G

S

SOURCE

DRAIN

(TAB)

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 1461.2

RFM12N18, RFM12N20, RFP12N18, RFP12N20

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFM12N18 RFM12N20 RFP12N18 RFP12N20 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1mΩ) (Note 1). . . . . . . . . . . . . . . V

DSS

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DM

GS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

pkg

180 200 180 200 V
180 200 180 200 V

D

12
30

12
30

12

30
±20 ±20 ±20 ±20 V
100

D

0.8

100

0.8

75

0.6

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300

L

260

300
260

300
260

12
30

75

0.6

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFM12N18, RFP12N18 180 - - V

RFM12N20, RFP12N20 200 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

DSS, VGS

= 0V,

--25µA

TC = 125oC

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

GSS

VGS = ±20V, VDS = 0V - - ±100 nA

= 12A, VGS = 10V, (Figures 6, 7) - - 0.250 Ω
= 12A, VGS = 10V - - 3.0 V

= 100V, I
RL = 16.5Ω, VGS = 10V,

r

(Figures 10, 11, 12)

≈ 6A, R

D

= 50Ω,

G

-3550ns

- 130 200 ns

- 120 180 ns

f

VDS = 25V, VGS = 0V, f = 1MHz,

ISS

(Figure 9)

OSS
RSS

RFM12N18, RFM12N20 - - 1.25oC/W

θJC

- 105 160 ns

- - 1700 pF

- - 600 pF

- - 300 pF

RFP12N18, RFP12N20 - - 1.67oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

NOTE:

2. Pulsed: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

ISD = 6A - - 1.4 V

SD

ISD = 4A, dISD/dt = 100A/µs - 325 - ns

rr

5-2

RFM12N18, RFM12N20, RFP12N18, RFP12N20

Typical Performance

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Curves Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

100

TC = 25oC

ID (MAX)
CONTINUOUS

10

14

12

10

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

30

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

25

CASE TEMPERATURE
T

= 25oC

C

20

VGS = 20V

VGS = 10V

VGS = 8V

VGS = 7V

VGS = 6V

OPERATION IN
THIS AREA MAY BE
LIMITED BY r

1

, DRAIN CURRENT (A)

D

I

0.1
1 10 100 1000

DS(ON)

V

(MAX) 180V

DSS

RFM12N18, RFP12N18
V

(MAX) 200V

DSS

RFM12N20, RFP12N20

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

15

VGS = 5V

10

, DRAIN CURRENT (A)

D

I

5

0

01234567

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

VGS = 4V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

40

VDS = 10V
PULSE DURATION = 80µs

35

DUTY CYCLE ≤ 2%

30

25

20

15

, DRAIN CURRENT (A)

10

D

I

5

0

012345678910

125oC

-40oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

-40oC

25oC

125oC

0.6
VGS = 10V

PULSE DURATION = 80µs

0.5

DUTY CYCLE ≤ 2%

0.4

125oC

0.3

, DRAIN TO SOURCE

0.2

ON RESISTANCE (Ω)

DS(ON)

r

0.1

0

0 5 10 15 20 25 30 35

, DRAIN CURRENT (A)

I

D

25

-40

o

C

o

C

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs

GATE VOLTAGE AND DRAIN CURRENT

5-3

RFM12N18, RFM12N20, RFP12N18, RFP12N20

Typical Performance

Curves Unless Otherwise Specified (Continued)

2

ID = 12A, VGS = 10V

1.5

1

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150 200
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1600

1400

1200

C

ISS

1000

800

600

C

400

C, CAPACITANCE (pF)

200

0

0 1020304050

OSS

C

RSS

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS
OSS

GD

≈ CDS + C

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GS

1.3
VGS = V

DS

ID = 250µA

1.2

1.1

1

0.9

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.7

0.6

-50 0 50 100 150 200
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 8. NORMALIZED GATE THRESHOLD V OLTAGE vs

JUNCTION TEMPERATURE

200

V

DS

150

VDD = BV

DSS

GATE

SOURCE

VDD = BV

DSS

VOLTAGE

100

50

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

20

I

G(REF)

I

G(ACT)

RL = 16.67Ω

= 1mA

I

G(REF)

= 10V

V

GS

0.75BV

0.50BV

0.25BV

DSS
DSS
DSS

0.75BV

0.50BV

0.25BV

DSS
DSS
DSS

DRAIN SOURCE VOLTAGE

t, TIME (µs)

80

I

G(REF)

I

G(ACT)

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WA VEFORMS FOR

CONSTANT GATE CURRENT

10

8

6

4

2

0

, GATE TO SOURCE VOLTAGE (V)

GS

V

Test Circuits and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

t

ON

t

d(ON)

t

R

L

+

V

DD

-

V

DS

0

r

90%

10%

DUT

V

GS

10%

0

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

5-4