Harris Semiconductor IRF541, IRF540, IRF542, IRF543, RF1S540 Datasheet

5-1

Semiconductor

Features

• 25A and 28A, 80V and 100V

•r

DS(ON)

= 0.077Ω and 0.100Ω

• Single Pulse Avalanche Energy Rated

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA17421.

Symbol

Packaging

JEDEC TO-220AB JEDEC TO-262AA

JEDEC TO-263AB

Ordering Information

P AR T NUMBER P ACKAGE BRAND

IRF540 TO-220AB IRF540
IRF541 TO-220AB IRF541
IRF542 TO-220AB IRF542
IRF543 TO-220AB IRF543
RF1S540 TO-262AA RF1S540
RF1S540SM TO-263AB RF1S540SM

NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.

G

D

S

GATE

DRAIN (FLANGE)

SOURCE

DRAIN

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN
(FLANGE)

GATE

SOURCE

November 1997

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

File Number 2309.3

IRF540, IRF541, IRF542,

IRF543, RF1S540, RF1S540SM

25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,

N-Channel Power MOSFETs

5-2

Absolute Maximum Ratings T

C

= 25oC, Unless Otherwise Specified

IRF540, RF1S540,

RF1S540SM IRF541 IRF542 IRF543 UNITS

Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .V

DS

100 80 100 80 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . V

DGR

100 80 100 80 V

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I

D

TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

28
20

28
20

25
17

25
17

A
A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I

DM

110 110 100 100 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V

GS

±20 ±20 ±20 ±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P

D

150 150 150 150 W

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . .E

AS

230 230 230 230 mJ

Operating and Storage Temperature . . . . . . . . . . . . TJ,T

STG

-55 to 175 -55 to 175 -55 to 175 -55 to 175

o

C

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T

L

Package Body for 10s, See Techbrief 334 . . . . . . . . . T

pkg

300

260

300
260

300
260

300
260

o

C

o

C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to TJ = 150oC.

Electrical Specifications T

C

= 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V (Figure 10)

IRF540, IRF542,
RF1S540, RF1S540SM

100 - - V

IRF541, IRF543 80 - - V

Gate to Threshold Voltage V

GS(TH)VGS

= VDS, ID = 250µA2-4V

Zero Gate Voltage Drain Current I

DSS

VDS = Rated BV

DSS

, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BV

DSS

, VGS = 0V

TJ = 150oC

- - 250 µA

On-State Drain Current (Note 2) I

D(ON)VDS

> I

D(ON)

x r

DS(ON) MAX

, VGS = 10V

(Figure 7)

IRF540, IRF541,
RF1S540, RF1S540SM

28 - - A

IRF542, IRF543 25 - - A

Gate to Source Leakage Current I

GSSVGS

= ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) r

DS(ON)ID

= 17A, VGS = 10V (Figures 8, 9)

IRF540, IRF541,
RF1S540, RF1S540SM

- 0.060 0.077 Ω

IRF542, IRF543 - 0.080 0.100 Ω

Forward Transconductance (Note 2) g

fs

VDS≥ 50V, ID = 17A (Figure 12) 8.7 13 - S

Turn-On Delay Time t

d(ON)VDD

= 50V,ID≈ 28A, RG≈ 9.1Ω, RL = 1.7Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature

-1523 ns

Rise Time t

r

- 70 110 ns

Turn-Off Delay Time t

d(OFF)

-4060 ns

Fall Time t

f

-5075 ns

Total Gate Charge
(Gate to Source + Gate to Drain)

Q

g(TOT)VGS

= 10V, ID = 28A, VDS = 0.8 x Rated
BV

DSS

, I

g(REF)

= 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of Op­erating Temperature

-3859nC

Gate to Source Charge Q

gs

-8 - nC

Gate to Drain “Miller” Charge Q

gd

-21 - nC

IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM

5-3

Input Capacitance C

ISS

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11)

- 1450 - pF

Output Capacitance C

OSS

- 550 - pF

Reverse Transfer Capacitance C

RSS

- 100 - pF

Internal Drain Inductance L

D

Measured From the
Contact Screw on Tab
To Center of Die

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

- 3.5 - nH

Measured From the
Drain Lead, 6mm
(0.25in) from Package to
Center of Die

- 4.5 - nH

Internal Source Inductance L

S

Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

- 7.5 - nH

Thermal Resistance Junction to Case R

θJC

--1

o

C/W

Thermal Resistance
Junction to Ambient

R

θJA

Free Air Operation - - 80

o

C/W

R

θJA

RF1S540SM Mounted on FR-4 Board with
Minimum Mounting Pad

--62

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I

SD

Modified MOSFET Sym­bol Showing the Integral
Reverse
P-N Junction Diode

- - 28 A

Pulse Source to Drain Current
(Note 3)

I

SDM

- - 110 A

Source to Drain Diode Voltage (Note 2) V

SD

TJ = 25oC, ISD = 27A, VGS = 0V (Figure 13) - - 2.5 V

Reverse Recovery Time t

rr

TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 70 150 300 ns

Reverse Recovery Charge Q

RR

TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 0.44 1.0 1.9 µC

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 25V, starting TJ= 25oC, L = 440µH, RG= 25Ω, peak IAS = 28A. (Figures 15, 16).

Electrical Specifications T

C

= 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

L

S

L

D

G

D

S

G

D

S

IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM