Harris Semiconductor IRF513, IRF511, IRF510, IRF512 Datasheet

January 1998

Semiconductor

IRF510, IRF511,

IRF512, IRF513

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm,
N-Channel Power MOSFETs

Features

• 4.9A, and 5.6A, 80V and 100V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.54Ω and 0.74Ω

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRF510 TO-220AB IRF510
IRF511 TO-220AB IRF511
IRF512 TO-220AB IRF512
IRF513 TO-220AB IRF513

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA17441.

Symbol

D

G

S

NOTE: When ordering, include the entire part number.

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

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File Number 1573.2

IRF510, IRF511, IRF512, IRF513

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF510 IRF511 IRF512 IRF513 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (R

= 20kΩ) (Note 1). . . . . . . . . . V

GS

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

T

= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

DGR

D
D

DM

GS

D

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.29 0.29 0.29 0.29 W/

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E

Operating and Storage Temperature Range. . . . . . . . . T

AS

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from 25ase for 10s . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

100 80 100 80 V
100 80 100 80 V

5.6 5.6 4.9 4.9 A
4 4 3.4 3.4 A

20 20 18 18 A

±20 ±20 ±20 ±20 V

43 43 43 43 W

19 19 19 19 mJ

-55 to 175 -55 to 175 -55 to 175 -55 to 175

300
260

300
260

300
260

300
260

o

C

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSVGS

= 0V, ID = 250µA, (Figure 10)

IRF510 IRF512 100 - - V

IRF511, IRF513 80 - - V
Gate to Threshold Voltage V
Zero-Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

GS(TH)VGS

DSS

D(ON)

IRF510, IRF511 5.6 - - A

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS> I

D(ON) xrDS(ON)MAX,VGS

, VGS = 0V - - 25 µA

DSS

, VGS = 0V TJ = 150oC - - 250 µA

DSS

= 10V,

(Figure 7)

IRF512, IRF513 4.9 - - A
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)

GSS

VGS = ±20V - - ±100 nA
VGS = 10V, ID = 3.4A, (Figures 8, 9)

IRF510, IRF511 - 0.4 0.54 Ω

IRF512, IRF513 - 0.5 0.74 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)ID

VGS = 50V, ID = 3.4A, (Figure 12) 1.3 2.0 - S

fs

≈ 5.6A, RGS = 24Ω , VDD = 50V, RL = 9Ω

- 8 11 ns

VDD = 50V, VGS = 10V, (Figures 17, 18)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)

MOSFET switching times are essentially

r

independent of operating temperature

f

= 10V, ID = 5.6A, VDS = 0.8 x Rated BV

I

= 1.5mA (Figures 14, 19, 20)

G(REF)

DSS

-2536ns

-1521ns

-1221ns

,

- 5.0 7.7 nC

Gate charge is essentially independent of

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

operating temperature

gs

gd

- 2.0 - nC

- 3.0 - nC

5-2

IRF510, IRF511, IRF512, IRF513

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C

OSS

RSS

Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL Test Conditions MIN TYP MAX UNITS

VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11) - 135 - pF

ISS

-80- pF

-20- pF

Measured From the

D

Contact Screw On Tab
To Center of Die

Modified MOSFET
Symbol Showing the
Internal Devices

- 3.5 - nH

Inductances

Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die

Measured From The

S

Source Lead, 6mm

D

L

D

G

L

S

S

- 4.5 - nH

- 7.5 - nH

(0.25in) From Header to
Source Bonding Pad

θJC

Free air operation - - 80

θJA

- - 3.5oC/W

o

C/W

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

SD

SDM

Modified MOSFET
Symbol Showing the

D

Integral Reverse
P-N Junction Diode

TJ = 25oC, ISD= 5.6A, VGS = 0V (Figure 13) - - 2.5 V

SD

TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs 4.6 96 200 ns

rr

TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs 0.17 0.4 0.83 µC

RR

G

S

- - 5.6 A

- - 20 A

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, start TJ = 25oC, L = 910µH, RG = 25Ω, peak IAS = 5.6A (See Figure 15, 16).

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