HARRIS Semiconductor IRF244, IRF245, IRF246, IRF247 Service Manual
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Semiconductor
January 1998
IRF244, IRF245,
IRF246, IRF247
14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm,
N-Channel Power MOSFETs
Features
• 14A and 13A, 275V and 250V
•r
DS(ON)
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System
Operation
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.28Ω and 0.34Ω
Components to PC Boards”
Ordering Information
PART NUMBER PACKAGE BRAND
IRF244 TO-204AA IRF244
IRF245 TO-204AA IRF245
IRF246 TO-204AA IRF246
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17423.
Symbol
D
G
S
IRF247 TO-204AA IRF247
NOTE: When ordering, include the entire part number.
Packaging
DRAIN
(FLANGE)
GATE (PIN 1)
JEDEC TO-204AA
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1997
5-1
File Number 2209.2
IRF244, IRF245, IRF246, IRF247
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRF244 IRF245 IRF246 IRF247 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . V
DS
DGR
250 250 275 275 V
250 250 275 275 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 14 13 14 13 A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . P
D
DM
GS
D
8.8 8.0 8.8 8.0 A
56 52 56 52 A
±20 ±20 ±20 ±20 V
125 125 125 125 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 1.0 1.0 1.0 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . TJ, T
AS
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . T
Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
550 550 550 550 mJ
-55 to 150 -55 to 150 -55 to 150 -55 to 150
300
260
300
260
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSVGS
IRF244, IRF245 250 - - V
= 0V, ID = 250µA
(Figure 10)
IRF246, IRF247 275 - - V
Gate to Threshold Voltage V
Zero-Gate Voltage Drain Current I
GS(TH)VGS
DSS
= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS = 0V - - 25 µA
DSS
, VGS = 0V,
DSS
- - 250 µA
TJ = 125oC
On-State Drain Current (Note 2) I
D(ON)VDS
> I
D(ON) xrDS(ON)MAX
, VGS = 10V
IRF244, IRF246 14 - - A
IRF245, IRF247 13 - - A
Gate to Source Leakage Current I
Drain to Source On-State Resistance (Note 2) r
GSSVGS
DS(ON)VGS
= ±20V - - ±100 nA
= 10V, ID = 8A, (Figures 8, 9)
IRF244, IRF246 - 0.20 0.28 Ω
IRF245, IRF247 - 0.24 0.34 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)VDD
VDS≥ 50V, ID = 8A, (Figure 12) 6.7 10 - S
fs
= 125V, ID≈ 14A, RG = 9.1Ω, RL = 8.9Ω
-1624ns
(Figures 17, 18) MOSFET Switching Times
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
are Essentially Independent of Operating
r
Temperature
f
= 10V, ID = 14A, VDS = 0.8 x Rated
BV
DSS
, I
g(REF)
= 1.5mA,
- 67 100 ns
-5380ns
-4974ns
-3959nC
(Figures 14, 19, 20) Gate Charge is
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Essentially Independent of Operating
gs
Temperature
gd
- 6.6 - nC
-20- nC
5-2
IRF244, IRF245, IRF246, IRF247
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Internal Drain Inductance L
Internal Source Inductance L
Junction to Case R
Junction to Ambient R
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
Pulse Source to Drain Current
(Note 3)
I
SD
SM
VGS = 0V, VDS = 25V, f = 1.0MHz
ISS
- 1300 - pF
(Figure 11)
OSS
RSS
Measured Between
D
the Contact Screw on
the Flange that is
Closer to Source and
Gate Pins and the
Center of Die
Measured From The
S
Source Lead, 6mm
(0.25in) From the
Flange and the
Source Bonding Pad
θJC
Free Air Operation - - 30oC/W
θJA
Modified MOSFET
Symbol Showing the
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
D
Integral Reverse
- 320 - pF
-69- pF
- 5.0 - nH
- 12.5 - nH
- - 1.0oC/W
- - 14 A
- - 56 A
P-N Junction Diode
G
S
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q
Forward Turn-On Time t
ON
TJ = 25oC, ISD= 14A, VGS = 0V (Figure 13) - - 1.8 V
SD
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 150 300 640 ns
rr
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 1.6 3.4 7.2 µC
RR
Intrinsic Turn-On Time is Negligible, Turn-On
Speed is Substantially Controlled by LS + L
----
D
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25Ω, peak IAS = 14A. See Figures 15, 16.
5-3
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