HARRIS Semiconductor IRF220, IRF221, IRF222, IRF223 Service Manual

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Semiconductor

October 1997

Features

• 4.0A and 5.0A, 150V and 200V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.8Ω and 1.2Ω

DS(ON)

Components to PC Boards”

Ordering Information

IRF220, IRF221,

IRF222, IRF223

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,
N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA09600.

Symbol

D

PART NUMBER PACKAGE BRAND

IRF220 TO-204AA IRF220
IRF221 TO-204AA IRF221
IRF222 TO-204AA IRF222
IRF223 TO-204AA IRF223

NOTE: When ordering, use the entire part number.

Packaging

DRAIN
(FLANGE)

GATE (PIN 1)

G

S

JEDEC TO-204AA

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 199&

1

File Number 1567.2

IRF220, IRF221, IRF222, IRF223

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF220 IRF221 IRF222 IRF223 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

200 150 200 150 V
200 150 200 150 V

5.0

3.0

5.0

3.0

4.0

2.5

4.0

2.5

20 20 16 16 A

±20 ±20 ±20 ±20 V

40 40 40 40 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 0.32 0.32 0.32 W/oC

Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

85 85 85 85 mJ

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V, (Figure 10)

IRF220, IRF222 200 - - V

IRF221, IRF223 150 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

GS(TH)VDS

DSSVDS

D(ON)VDS

= VGS, ID = 250µA 2.0 - 4.0 V
= Rated BV

VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V

IRF220, IRF221 5.0 - - A

IRF222, IRF223 4.0 - - A
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

GSSVGS

DS(ON)ID

= ±20V - - ±100 nA

= 2.5A, VGS = 10V, (Figure 8)

IRF220, IRF221 - 0.5 0.8 Ω

IRF222, IRF223 - 0.8 1.2 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

VDS > I

fs

= 0.5 x Rated BV

D(ON)

x r

DS(ON)MAX

, ID = 2.5A 1.3 2.5 - S

, ID≈ 2.5A, RG = 50Ω

DSS

-2040ns

For IRF220, 222 RL = 80Ω

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)

For IRF221, 223 RL = 60Ω

r

(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature

f

= 10V, ID = 6.0A, VDS = 0.8 x Rated BV

I

= 1.5mA, (Figures 14, 19, 20) Gate

g(REF)

DSS

-3060ns

- 50 100 ns

-3060ns

-1115nC

Charge is Essentially Independent of Operating

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

gs

gd

Temperature

- 5.0 - nC

- 6.0 - nC

2

IRF220, IRF221, IRF222, IRF223

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

ISSVDS

= 25V, VGS = 0V, f = 1MHz

- 450 - pF

(Figure 11)

OSS

RSS

Measured Between the

D

Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die

Measured From the

S

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

- 150 - pF

-40-pF

- 5.0 - nH

- 12.5 - nH
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad

θJC

Free Air Operation - - 30oC/W

θJA

G

L

S

S

- - 3.12oC/W

Continuous Source to Drain Current I

IRF220, IRF221 - - 5.0 A
IRF222, IRF223 - - 4.0 A

Pulse Source to Drain Current (Note 3) I

Modified MOSFET

SD

Symbol Showing the
Integral Reverse
P-N Junction Rectifier

SDM

D

G

IRF220, IRF221 - - 20 A
IRF222, IRF223 - - 16 A

S

Source to Drain Diode Voltage (Note 2) V

SD

IRF220, IRF221 TC = 25oC, ISD = 5.0A, VGS = 0V, (Figure 13) - - 2.0 V

IRF222, IRF223 TC = 25oC, ISD = 4.0A, VGS = 0V, (Figure 13) - - 1.8 V
Reverse Recovery Time t
Reverse Recovery Charge Q

TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs - 350 - ns

rr

TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs - 2.3 - µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 10V, starting TJ= 25oC, L = 6.18mH, RG= 50Ω, peak IAS = 5A. See Figures 15, 16.

3