SEMICONDUCTOR
January 1997
CD22100
CMOS 4 x 4 Crosspoint Switch with Control Memory
High-Voltage Type (20V Rating)
Features
• Low ON Resistance . . . . . . . . . .75Ω (Typ) at VDD = 12V
• “Built-In” Control Latches
• Large Analog Signal Capability. . . . . . . . . . . . . . . ±V
DD
• 10MHz Switch Bandwidth
• Matched Switch Characteristics ∆R
V
= 12V
DD
= 18Ω (Typ) at
ON
• High Linearity - 0.5% Distortion (Typ) at f = 1kHz,
V
IN
= 5V
, VDD = 10V, and RL = 1kΩ
P-P
• Standard CMOS Noise Immunity
• 100% Tested for Maximum Quiescent Current at 20V
Ordering Information
PART
NUMBER
CD22100E -40 to 85 16 Ld PDIP E16.3
CD22100F -55 to 125 16 Ld CERDIP F16.3
TEMP . RANGE
(oC) PACKAGE PKG. NO.
Description
CD22100 combines a 4 x 4 array of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch
circuits. Any one of the sixteen transmission gates (crosspoints) can be selected by applying the appropriate four line
/2
address. The selected transmission gate can be turned on or
off by applying a logic one or zero, respectively, to the data
input and strobing the strobe input to a logic one. Any
number of the transmission gates can be ON simultaneously.
When the required operating power is applied to the
CD22100, the states of the 16 switches are indeterminate.
Therefore, all switches must be turned off by putting the
strobe high and data in low, and then addressing all switches
in succession.
Pinout
X2
DATA IN
STROBE
V
SS
CD22100
(PDIP, CERDIP)
TOP VIEW
1
2
3
C
4
D
5
B
6
A
7
8
Functional Diagram
DAT A
STROBE
16
V
DD
Y1
15
14
Y2
13
X4
12
X3
11
Y4
10
Y3
9
X1
6
A
5
B
3
ADDRESS
C
4
D
4-LINE TO 16-LINE DECODER
IN
7
2
16 CONTROL LATCHES
0 1 2 3
4 5 6 7
8 9 10 11
12 13 14 15
9 1 12 13
X1 X2 X3 X4
15
Y1
14
Y2
10
Y3
11
Y4
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© Harris Corporation 1997
4-184
File Number 1076.3
CD22100
Absolute Maximum Ratings Thermal Information
Supply Voltage (Referenced to VSS Terminal). . . . . . . . .-0.5 to 20V
Input Voltage (All Inputs) . . . . . . . . . . . . . . . . . . . . -0.5 to VDD 0.5V
Input Current (Any one input (Note 1)) . . . . . . . . . . . . . . . . . . . .±10mA
Power Dissipation
For TA = -40oC to 60oC (Package Type E) . . . . . . . . . . . . 500mW
For TA = 60oC to 85oC
(Package Type E) . . . . . . . . Derate Linearly 12mW/oC to 200mW
For TA = -55oC to 100oC (Package Type F) . . . . . . . . . . . 500mW
For TA = 100oC to 125oC
(Package Type F) . . . . . . . . Derate Linearly 12mW/oC to 200mW
Device Dissipation per Transmission Gate
For TA = Full Package Temper ature Range (All Types) . . . . . 100mW
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Storage Temperature Range. . . . . . . . . . . . . . . -65oC ≤ TA≤ 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
Operating Conditions
Temperature Range
Package Type F. . . . . . . . . . . . . . . . . . . . . . . -55oC ≤ TA≤ 125oC
Package Type E. . . . . . . . . . . . . . . . . . . . . . . . -40oC ≤ TA≤ 85oC
Supply Voltage Range
For TA = Full Package Temperature Range . . . . . . . . . . . . . .3V to 18V
Electrical Specifications Values at -55
o
C, 25oC, 125oC Apply to F Package
Values at -40oC, 25oC, 85oC Apply to E Package
PARAMETER SYMBOL
TEST
CONDITIONS -55
V
DD
(V) MAX MAX MAX MAX MIN TYP MAX
o
C -40oC85oC 125oC25
STATIC CROSSPOINTS
Quiescent Device
Current
I
(Max) 1 5 5 5 150 150 - 0.04 5 µA
DD
1 10 10 10 300 300 - 0.04 10 µA
1 15 20 20 600 600 - 0.04 20 µA
1 20 100 100 3000 3000 - 0.08 100 µA
On Resistance R
(Max) Any Switch
ON
VIS = 0 to V
11 5 475 500 725 800 - 225 600 Ω
DD
12 10 135 145 205 230 - 85 180 Ω
- 12 100 110 155 175 - 75 135 Ω
13 15 70 75 110 125 - 65 95 Ω
∆R
Resistance ∆R
ON
ON
Between any
two switches
-5--- - -25- Ω
-10--- - -10-Ω
-12--- - -8- Ω
-15--- - -5- Ω
OFF Switch Leakage
Current
I
(Max) All switches
L
OFF, VIS = 18V
318 ±100 ±1000 - ±1 ±100
STATIC CONTROLS
Input Low Voltage V
(Max) OFF switch
IL
IL < 0.2µA
- 5 1.5 - - 1.5 V
-10 3 - - 3 V
-15 4 - - 4 V
Input High Voltage V
(Min) ON switch
IH
see R
characteristic
ON
- 5 3.5 3.5 - - V
-10 7 7 - - V
-15 11 11 - - V
Input Current I
(Max) Any control
IN
218±0.1 ±0.1 ±1 ±1-±10
VIN = 0, 18V
NOTES:
1. Maximum current through transmission gates (switches) = 25mA.
2. Determined by minimum feasible leakage measurement for automatic testing.
o
C
(Note 2)
-5
±0.1 µA
UNITSFIG.
nA
4-185
CD22100
Electrical Specifications T
= 25oC
A
TEST CONDITIONS
PARAMETER SYMBOL
f
IS
(kHz)
R
(kΩ)
VIS (V)
L
(Note 3)
V
(V)
DD
MIN TYP MAX UNITSFIGURE
DYNAMIC CROSSPOINTS
Propagation Delay Time,
(Switch ON) Signal Input to
Output
t
PHL
, t
PLH
5 - 10 5 5 - 30 60 ns
10 10 - 15 30 ns
15 15 - 10 20 ns
CL = 50pF; tR , tF = 20ns
Frequency Response (Any
Switch ON)
Sine Wave Response
f
3dB
16 1 1 5 10 - 40 - MHz
V
Sine Wav e Input,
20 log
OS
----------- -
V
-3dB=
IS
THD 1 1 5 10 - 0.5 - %
(Distortion)
Feedthrough (All switches OFF) F
DT
1.6 1 5 10 - -80 - dB
Sine Wave Input
Frequency for Signal Crosstalk F
CT
7-11010
Attenuation of 40dB Sine Wave Input - 1.5 - MHz
Attenuation of 110dB - - - - - 0.1 - kHz
Capacitance: C
IS
Xn to Ground - - - 5 - 15 - 18 - pF
Yn to Ground - - - 5 - 15 - 30 - pF
Feedthrough C
IOS
- - - - - 0.4 - pF
DYNAMIC CONTROLS
Propagation Delay Time: t
Strobe to Output
(Switch Turn-ON to High
Level)
Propagation Delay Time: t
Data-In to Output
(Turn-ON to High Level)
Propagation Delay Time: t
Address to Output
(Turn-ON to High Level)
Propagation Delay Time: t
Strobe to Output
(Switch Turn-OFF)
Propagation Delay Time: t
Data-In to Output
(Turn-ON to Low Level)
Propagation Delay Time: t
Address to Output
(Turn-OFF)
PZH
PZH
PZH
PHZ
PZL
PHZ
8RL = 1kΩ,
CL = 50pF,
tR , tF = 20ns
9RL = 1kΩ,
CL = 50pF,
tR , tF = 20ns
10 RL = 1kΩ,
CL = 50pF,
tR , tF = 20ns
8RL = 1kΩ,
CL = 50pF,
tR , tF = 20ns
9RL = 1kΩ,
CL = 50pF,
tR , tF = 20ns
10 RL = 1kΩ,
CL = 50pF,
tR , tF = 20ns
5 - 300 600 ns
10 - 125 250 ns
15 - 80 160 ns
5 - 110 220 ns
10 - 40 80 ns
15 - 25 50 ns
5 - 350 700 ns
10 - 135 270 ns
15 - 90 180 ns
5 - 165 330 ns
10 - 85 170 ns
15 - 70 140 ns
5 - 210 420 ns
10 - 110 220 ns
15 - 100 200 ns
5 - 435 870 ns
10 - 210 420 ns
15 - 160 320 ns
4-186