HAMAMATSU S8380, S8381 Service Manual

S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region (λp=750 nm). The photodiodes of S8380 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S8381 series also have a height of 2.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 3 different pixel quantities for each series, 128 (S8380-128Q), 256 (S8380-256Q, S8381-256Q) and 512 (S8380-512Q, S8381-512Q) and 1024 (S8381-1024Q). Quartz glass is the standard window material.

Features

High sensitivity in the IR and soft X-ray regions

Wide active area Pixel pitch: 50 µm (S8380 series)

25 µm (S8381 series)

Pixel height: 2.5 mm

High UV sensitivity with good stability

Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature

Excellent output linearity and sensitivity spatial uniformity

Lower power consumption: 1 mW Max.

Start pulse and clock pulses are CMOS logic compatible

Applications

Multichannel spectrophotometry

Image readout system

IMAGE SENSOR

NMOS linear image sensor

NMOS linear image sensors with high IR sensitivity

S8380/S8381 series

2.5 mm

1.0 µm

400 µm

OXIDATION SILICON

N TYPE SILICON

P TYPE SILICON

S8380 SERIES: a=50 µm, b=45 µm S8381 SERIES: a=25 µm, b=20 µm

KMPDC0020EA

Figure 1 Equivalent circuit

Vss

START st CLOCK CLOCK12

ACTIVE PHOTODIODE

SATURATION CONTROL GATE

SATURATION CONTROL DRAIN

DUMMY DIODE

DUMMY VIDEO

ACTIVE VIDEO

END OF SCAN

DIGITAL SHIFT RE

GISTER

(MOS SHIFT RE

GISTER)

Figure 2 Active area structure

KMPDA0125EA

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Absolute maximum ratings

Parameter Symbol Value Unit

Input pulse (φ1, φ2, φst) voltage Vφ

15 V

Power consumption *

P 1 mW

Operating temperature *

Topr -40 to +65 °C

Storage temperature Tstg -40 to +85 °C

*1: Vφ=5.0 V

*2: No condensation

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NMOS linear image sensor

S8380/S8381 series

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Shape specifications

Parameter S8380-128Q S8380-256Q S8380-512Q S8381-256Q S8381-512Q S8381-1024Q Unit

Number of pixels 128 256 512 256 512 1024 -

Package length 31.75 40.6 31.75 40.6 mm Number of pin 22 22 Window material *

Quartz Quartz -

Weight 3.0 3.5 3.0 3.5 g

*3: Fiber optic plate is available.

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Specifications (Ta=25 °C)

S8380 series S8381 series

Parameter Symbol

Min. Typ. Max. Min. Typ. Max.

Unit

Pixel pitch - -50- -25-

m Pixel height - - 2.5 - - 2.5 - mm Spectral response range (10 % of peak)

200 to 1000 200 to 1000 nm

Peak sensitivity wavelength

- 750 - - 750 - nm

Photodiode dark current *

- 0.2 0.6 - 0.1 0.3 pA

Photodiode capacitance *

Cph - 20 - - 10 - pF

Saturation exposure *4, *

Esat -90- -90-m

· s

Saturation output charge *

Qsat - 50 - - 25 - pC

Photo response non-uniformity *

PRNU--±3--±3 %

*4: Vb=2.0 V, Vφ=5.0 V *5: 2856 K, tungsten lamp *6: 50 % of saturation, excluding the start pixel and last pixel

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Electrical characteristics (Ta=25 °C)

S8380 series S8381 series

Parameter Symbol

Condition

Min. Typ. Max. Min. Typ. Max.

Unit

High

Vφ1, Vφ2 (H)

4.5 5 10 4.5 5 10 V

Clock pulse (φ1, φ2) voltage

Low

Vφ1, Vφ2 (L)

0-0.40-0.4 V

High

Vφs (H)

4.5

Vφ1

10 4.5

Vφ1

10 V

Start pulse (φst) voltage

Low

Vφs (L)

0 - 0.4 0 - 0.4 V

Video bias voltage *

Vb 1.5

Vφ - 3.0 Vφ - 2.5

1.5

Vφ - 3.0 Vφ - 2.5

V Saturation control gate voltage Vscg - 0 - - 0 - V Saturation control drain voltage Vscd - Vb - - Vb - V

Clock pulse (φ1, φ2) rise / fa ll tim e

trφ1, trφ2 tfφ1, tfφ2

- 20 - - 20 - ns

Clock pulse (φ1, φ2) pulse width tpwφ1, tpwφ2

200 - - 200 - - ns

Start pulse (φst) rise / fall time trφs, tfφs

- 20 - - 20 - ns

Start pulse (φst) pulse width tpwφs

200 - - 200 - - ns Start pulse (φst) and clock pulse (φ2) overlap

tφov

200 - - 200 - - ns

Clock pulse space *

X1, X

trf - 20 - - trf - 20 - - ns

Data rate *

f 0.1 - 2000 0.1 - 2000 kHz

80 (-128 Q)

100 (-256 Q)

-ns

120 (-256 Q)

150 (-512 Q)

-ns

Video delay time tvd

50 % of

sa tu ratio n

9, *10

160 (-512 Q)

200 (-1024 Q)

-ns

21 (-128 Q)

- -

27 (-256 Q)

- pF

36 (-256 Q)

- -

50 (-512 Q)

- pF

Clock pulse (φ1, φ2) line capacitance

5 V bias

67 (-512 Q)

- -

100 (-1024 Q)

- pF

12 (-128 Q)

14 (-256 Q)

-pF

20 (-256 Q)

24 (-512 Q)

-pF

Saturation control gate (Vscg) line capacitance

Cscg 5 V bias

35 (-512 Q)

45 (-1024 Q)

-pF

7 (-128 Q)

- -

10 (-256 Q)

- pF

11 (-256 Q)

- -

16 (-512 Q)

- pFVideo line capacitance C

2 V bias

20 (-512 Q)

- -

30 (-1024 Q)

- pF

*7: Vφ is input pulse voltage (refer to figure 8). *8: trf is the clock pulse rise or fall time. A clock pulse space of

“rise time/fall time - 20 ” ns (nanoseconds) or more should be

input if the clock pulse rise or fall time is longer than 20

ns (refer to figure 7). *9: Vb=2.0 V, Vφ=5.0 V *10: Measured with C7883 driver circuit.

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