HAMAMATSU S2381, S2382, S5139, S8611, S2383 Service Manual

S2381 to S2385

,

S5139

,

S8611

,

S3884

Features

l

Stable operation at low bias

l

High-speed response

l

High sensitivity and low noise

Applications

l

Spatial light transmission

l

Rangefinder

PHOTODIODE

Si APD

Low bias operation, for 800 nm band

1

■ General ratings / Absolute maximum ratings

Absolute maximum ratings

Active area *

2

size

Effective active

area

Operating

temperature

Topr

Storage

temperature

Tstg

Type No.

Dimensional

outline/

Window

material *

1

Package

(mm) (mm

2

) (°C) (°C)

S2381

φ

0.2 0.03

S2382

➀

/K

S5139

➁

/L

S8611

➂

/L

φ

0.5 0.19

S2383
S2383-10 *

3

➀

/K

TO-18

φ

1.0 0.78

S3884

➃

/K

φ

1.5 1.77

S2384

➄

/K

TO-5

φ

3.0 7.0

S2385

➅

/K TO-8

φ

5.0 19.6

-20 to +85 -55 to +125

■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Breakdown

voltage

V

BR

ID=100 µA

Dark

current *

4

I

D

Spectral

response

range

λ

Peak

*

4

sensitivity

wavelength

λ

p

Photo

sensitivity

S

M=1

λ

=800 nm

Quantum
efficiency

QE

M=1

λ

=800 nm

Temp.

coefficient

of

V

BR

Cut-off *

4

frequency

fc

R

L

=50

Ω

Terminal

*

4

capacitance

Ct

Excess

Noise

figure *

4

x

λ

=800 nm

Gain

M

λ

=800 nm

Type No.

(nm) (nm) (A/W) (%)

Typ.

(V)

Max.

(V) (V/°C)

Typ.
(nA)

Max.

(nA) (MHz) (pF)
S2381 0.05 0.5 1000 1.5
S2382
S5139
S8611

0.1 1 900 3

S2383
S2383-10 *

3

0.2 2 600 6

S3884 0.5 5 400 10

100

S2384 1 10 120 40 60
S2385

400 to 1000

800 0.5 75 150 200 0.65

330 40 95

0.3

40
*1: Window material K: borosilicate glass, L: lens type borosilicate glass
*2: Active area in which a typical gain can be obtained
*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area
*4: Measured under conditions that the device is operated at the gain listed in the specification table

Note) The following different breakdown voltage ranges are available.

S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V)
S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V)

查询S2381供应商

Si APD

S2381 to S2385, S5139, S8611, S3884

■ Spectral response ■ Quantum efficiency vs. wavelength

■ Dark current vs. reverse voltage ■ Gain vs. reverse voltage

KAPDB0020EB KAPDB0021EA

KAPDB0016EC KAPDB0017EC

WAVELENGTH (nm)

PHOTO SENSITIVITY (A/W)

(Typ. Ta=25 ˚C, λ=800 nm)

200 400 600 800

1000

40

20

0

50

30

10

M=100

M=50

WAVELENGTH (nm)

QUANTUM EFFICIENCY (%)

60

200 400 600 800 1000

40

20

0

80

100

(Typ. Ta=25 ˚C)

(Typ. Ta=25 ˚C)

S2384

S3884

S2382, S5139,
S8611

S2381

S2383/-10

REVERSE VOLTAGE (V)

DARK CURRENT

0 50 100 150 200

1 pA

100 pA

1 nA

10 nA

10 pA

80 120100 140 160 180

1

10

100

1000

10000

REVERSE VOLTAGE (V)

GAIN

(Typ. λ=800 nm)

-20 ˚C

0 ˚C

20 ˚C

40 ˚C

60 ˚C

■ Terminal capacitance vs. reverse voltage ■ Excess noise factor vs. gain

(Typ. Ta=25 ˚C, f=1 MHz)

S2384

S2385

S3884

S2383/-10

S2382
S5139, S8611

S2381

REVERSE VOLTAGE (V)

TERMINAL CAPACITANCE

10 pF

100 pF

1 nF

50 100

1 pF

2000 150

GAIN

EXCESS NOISE FACTOR

110

1

10

(Typ. Ta=25 ˚C, f=10 kHz, B=1 Hz)

100

M

0.5

λ=650 nm

M

0.3

λ=800 nm

M

0.2

KAPDB0018EC KAPDB0022EA

2