HAMAMATSU R821 Datasheet

For Astro-physics and Other Ultraviolet Radiation Detection

Solar Blind Response (160nm to 320nm), Cs-Te Photocathode

GENERAL

Spectral Response
Wavelength of Maximum Response

Photocathode
Window Material
Dynode
Base

Suitable Socket

PHOTOMULTIPLIER TUBE

R821

19mm (3/4 Inch) Diameter, 10-stage, Head-On

Parameter Description/Value Unit

160 to 320

240
Material
Minimum Effective Area

Structure
Number of Stages

Cs-Te

15

Fused silica

Linear focused

10

12-pin glass base

E678-12L (supplied)

mm dia.

nm
nm

—

—
—
—
—
—

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter Value Unit

Supply Voltage
Average Anode Current

Ambient Temperature

Between Anode and Cathode
Between Anode and Last Dynode

CHARACTERISTICS (at 25°C)

Parameter Min. Unit

Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30min. storage in darkness)

Time Response

NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.

Radiant at 254nm
Radiant at 254nm

Anode Pulse Rise Time
Electron Transit Time

—

4 × 10

—
—
—
—

3

VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE

Electrodes
Ratio

Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode

K Dy1

1.5

Dy21Dy31Dy41Dy51Dy61Dy71Dy81Dy9

111

Dy10 P

1250

250

0.01

-80 to +50

Typ. Max.

28

1.0 × 10

3.6 × 10

4
5

0.3

2.5
27

—
—
—

0.5
—
—

Vdc
Vdc

mA

°C

mA/W

A/W

—

nA

ns
ns

Subject to local technical requirements and regulat ions, availability of products included in this promotional material may var y. P lease consult with our sales office.
Information furnished by HAMA M ATSU is believed to be reliable. However, n o responsibility is assumed for possible inaccuracies or omissions. Specifications are

subject to change without notice. No patent rights are granted to any of the circuits described herein.

1998 Hamamatsu Photonics K.K.

©

PHOTOMULTIPLIER TUBE R821

Figure 1: Typical Spectral Response

TPMHB0511EA

100

10

QUANTUM
EFFICIENCY

WAVELENGTH (nm)

QUANTUM EFFICIENCY (%)

CATHODE RADIANT SENSITIVITY (mA/W)

1

0.1

0.01
100 200150 250 300 350 400

CATHODE
RADIANT
SENSITIVITY

Figure 2: Typical Gain Characteristics

TPMHB0512EA

8

10

7

10

6

10

5

10

GAIN

4

10

3

10

2

10

1

10

500 600 700 800 1000 1500

SUPPLY VOLTAGE (V)

Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)

19 ± 1

FACEPLATE

PHOTOCATHODE

15MIN.

12 PIN BASE

DY9

88 ± 2

DY7

13MAX.

DY10 DY8

P

5

4
3

2

DY5

DY3

6

7

1

12

SHORT PIN

8

10

11

DY1

TPMHA0432EB

DY6

9

K

DY4

DY2

10.5

(8)

360

13

9.5

Socket (Supplied)

(E678-12L)

28.6
13

18

3.7

3.3

13
18

35

2

2- 3.2

2-R4

9

6.7

(23.6)

7

2

TACCA0047EA

HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: [phone], Fax: [phone]

U.S.A.:

Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]

Germany:

Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]

France:

Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]

United Kingdom:
North Europe:
Italy:

Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

TPMH1210E01
JUL. 1998