HAMAMATSU R759 Datasheet

PHOTOMULTIPLIER TUBE

R759

For UV Range, 13mm (1/2 Inch) Diameter,

Head-on, 10-Stage, Cs-Te Photocathode

GENERAL

Parameter Description/Value Unit

Spectral Response
Wavelength of Maximum Response
Wavelength of Maximum Quantum Efficiency

Photocathode
Window Material
Dynode
Direct Interelectrode

Capacitances
Base
Suitable Socket

Material
Minimum Useful Size

Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes

160 to 320

240
200

Cs-Te

10

Synthetic Silica

Linear focused

10

1.0

2.0

13-pin glass base

E678-13A (supplied)

nm
nm
nm

—

mm dia.

—
—

—
pF
pF

—

—

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter Value Unit

Supply Voltage
Average Anode Current

Ambient Temperature

Between Anode and Cathode
Between Anode and Last Dynode

CHARACTERISTICS (at 25°C)

Parameter Min. Unit

Cathode Radiant Sensitivity at 254nm
Anode Radiant Sensitivity at 254nm
Gain
Anode Dark Current (after 30min. storage in darkness)

Time Response

Anode Pulse Rise Time
Electron Transit Time

—

4.0 × 10
—
—
—
—

VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE

Electrodes
Ratio

Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode

K Dy11Dy21Dy31Dy41Dy51Dy61Dy71Dy81Dy9

111

-80 to +50

3

Dy10 P

1250

250

0.01

Typ. Max.

28

1.4 × 10

5.0 × 10

4
5

0.3

2.5
24

—
—
—

—
—

Vdc
Vdc

mA

°C

mA/W

A/W

—

1

nA

ns
ns

Subject to local technical requirements and regulat ions, availability of products included in this promotional material may var y. P lease consult with our sales office.
Information furnished by HAMA M ATSU is believed to be reliable. However, n o responsibility is assumed for possible inaccuracies or omissions. Specifications are

subject to change without notice. No patent rights are granted to any of the circuits described herein.

1999 Hamamatsu Photonics K.K.

'

PHOTOMULTIPLIER TUBE R759

Figure 1: Typical Spectral Response

TPMHB0396EA

100

10

1

0.1

QUANTUM EFFICIENCY (%)

CATHODE RADIANT SENSITIVITY (mA/W)

0.01
100 150 200 250 300 350 400 450

WAVELENGTH (nm)

Figure 2: Typical Gain Characteristics

TPMHB0517EA

7

10

6

10

5

10

GAIN

4

10

3

10

2

10

500 600 700 800 1000 1200 1400

SUPPLY VOLTAGE (V)

Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)

13.5±0.5

FACEPLATE

PHOTOCATHODE

13 PIN BASE

10MIN.

71±213MAX.

DY9

DY7

DY5

DY3

P

6

5

4

3

2

DY1

SHORT PIN

DY10

1

7

8

13

DY8

9

12
K

11

10

DY6

IC

DY4

DY2

Socket

(E678-13A)

24
18

2- 2.2

13

3

10

3.4

11

TACCA0005EATPMHA0014EA

HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: [phone], Fax: [phone]

U.S.A.:

Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]

Germany:

Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]

France:

Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]

United Kingdom:
North Europe:
Italy:

Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

TPMH1258E01
MAR. 1999