HAMAMATSU R6836 Datasheet

PHOTOMULTIPLIER TUBE

R6836

For Astrophysics and Other Ultraviolet Radiation Detection
28 mm (1-1/8 Inch) Diameter, 11-stage, Cs-Te Photocathode

Solar Blind Response (115 nm to 320 nm), Head-On Type

GENERAL

Parameter Description/Value Unit

Spectral Response
Wavelength of Maximum Response

Photocathode
Window Material
Dynode
Suitable Socket

Material
Minimum Effective Area

Structure
Number of Stages

115 to 320

240

Cs-Te

23

2 Window

MgF

Box and Line

11

E678-14C (supplied)

nm
nm

—

mm dia.

—
—
—
—

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter Value Unit

Supply Voltage
Average Anode Current

Between Anode and Cathode
Between Anode and Last Dynode

CHARACTERISTICS (at 25°C)

Parameter Min. Unit

Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30min. storage in darkness)

Time Response

NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.

Radiant at 254nm
Radiant at 254nm

Anode Pulse Rise Time
Electron Transit Time

—

4.0 × 10
—
—
—
—

VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE

Electrodes
Ratio

Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode

K Dy11Dy21Dy31Dy41Dy51Dy61Dy7

11

Dy8 Dy9 Dy10 Dy11 P

1111

1500

250

0.01

Typ. Max.

3

28

1.4 × 10

5.0 × 10

0.3

4.0
30

4
5

—
—
—

1.0
—
—

Vdc
Vdc

mA

mA/W

A/W

—

nA

ns
ns

Subject to local technical requirements and regulat ions, availability of products included in this promotional material may var y. P lease consult with our sales office.
Information furnished by HAMA M ATSU is believed to be reliable. However, n o responsibility is assumed for possible inaccuracies or omissions. Specifications are

subject to change without notice. No patent rights are granted to any of the circuits described herein.

1999 Hamamatsu Photonics K.K.

©

PHOTOMULTIPLIER TUBE R6836

Figure 1: Typical Spectral Response

TPMHB0629EA

100

10

1

QUANTUM EFFICIENCY (%)

0.1

PHOTOCATHODE RADIANT SENSITIVITY (mA/W)

0.01
100 150 200 250 300 350 400

QUANTUM
EFFICIENCY

WAVELENGTH (nm)

CATHODE
RADIANT
SENSITIVITY

Figure 2: Typical Gain Characteristics

TPMHB0413EA

8

10

7

10

6

10

5

10

GAIN

4

10

3

10

2

10

500 750 1000 1250

SUPPLY VOLTAGE (V)

1500

Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)

28.2 ± 0.8

FACEPLATE

PHOTOCATHODE

23MIN.

14 PIN BASE

92 ± 213MAX.

DY9

DY7

DY5

DY11

4

3

DY3

P DY10

7

6

5

2

1

IC

SHORT PIN

DY8

8

9

10

11

12

13

14

DY1

DY6

DY4

DY2

K

TPMHA0454EA

2- 3.5

Socket

(E678-14C)

44
35

26

25

11.6

2.5

19.1

7
9

TACCA0004EA

30

HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: [phone], Fax: [phone]

U.S.A.:

Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]

Germany:

Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]

France:

Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]

United Kingdom:
North Europe:
Italy:

Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

TPMH1264E01
MAR. 1999