HAMAMATSU R6834 Datasheet

PHOTOMULTlPLlER TUBE

R6834

For Astrophysics and other ultraviolet radiation detection

28mm(1–1/8 Inch) diameter, 11–stage, Cs–Te photocathode

Solar blind response(160nm to 320nm), Head–on type

GENERAL

Parameter

Spectral Response 160 to 320
Wavelength of Maximum Response

Photocathode
Window MateriaI
Dynode
Suitable Socket

MateriaI Cs–Te
Minimum Effective Area 25 mm dia.

Structure
Number of Stages

Description / Value

240 nm

Synthetic silica

Box & Line

11

E678–14C (supplied)

Unit

nm

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter Value

Supply Voltage
Average Anode Current

Between Anode and Cathode
Between Anode and Last Dynode

1500

250

0.01

CHARACTERISTlCS (at 25 )

Parameter Max.Typ.Min.

Cathode Sensitivity
Anode Sensitivity

Gain
Anode Dark Current (after 30min. storage in darkness)

Time Response

NOTE:

Anode characteristics are measured with the voItage distribution ratio shown below.

Radiant at 254nm
Radiant at 254nm

Anode Pulse Rise Time
Electron Transit Time

28

1.4 10

5.0 10

4
5

0.3 1.0

4.0 ns
30

VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE

Electrodes
Ratio 1 1 1 1 1 1 1 1 1 1 1 1

SuppIy Voltage : 1000Vdc, K : Cathode, Dy : Dynode, P : Anode

K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 P

Unit

Vdc
Vdc
mA

Unit

mA/W

A/W

nA

ns

Subject to local technical requirements and regulat ions, availability of products included in this promotional material may va r y. Please consult with our sales office.
lnformation furnished by HAMA M ATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or commission. Specifications are

subjected to change without notice. No patent right are granted to any of the circuits described herein.

1997 Hamamatsu Photonics K.K.

©

PHOTOMULTlPLlER TUBE R6834

Figure 1: Typical Spectral Response Figure 2: Typical Gain

TPMHB0396EA

100

10

1

0.1

QUANTUM EFFICIENCY (%)

CATHODE RADIANT SENSITIVITY (mA/W)

0.01
100 150 200 250 300 350 400 450

WAVELENGTH (nm)

GAIN

TPMHB0413EA

8

10

7

10

6

10

5

10

4

10

3

10

2

10

500 750 1000 1250

SUPPLY VOLTAGE (V)

1500

Figure 3: Dimensional Outline and Basing Diagram (Unit : mm)

28.2 0.8

FACEPLATE

25MIN.

PHOTOCATHODE

P DY10

DY11

6

DY9

5

DY7

4

92 2

DY5

DY3

3

2

IC

SHORT PIN

1

DY8

8

7

9

DY6

10

11

DY4

12

DY2

13

K

14

DY1

BOTTOM VIEW

(BASING DIAGRAM)

TPMHA0226EA

14 PIN BASE

13MAX.

2- 3.5

Socket

(E678–14C)

44
35

26

25

2.5

11.6

30

7
9

TACCA0004EA

HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: [phone], Fax: [phone]

U.S.A.:

Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]

Germany:

Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]

France:

Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]

United Kingdom:
North Europe:
Italy:

Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

TPMH1158E01
JUN. 1997