PHOTOMULTlPLlER TUBES
R636–10, R758–10
UV to Near IR (R636–10:185 to 930 nm, R758–10:160 to 930nm) Spectral Response
28mm(1-1/8 Inch) Diameter , GaAs(Cs) Photocathode, 9-stage,Side-On Type
GENERAL
Parameter
Spectral Response 185 to 930 160 to 930 nm
Wavelength of Maximum Response 300 to 800 nm
Photocathode
Window Material UV glass Fused silica glass
Dynode
Direct Interelectrode
Capacitances
Base
SuitabIe Socket
MateriaI GaAs (Cs)
Minimum Effective Area 3 12 mm
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
R636–10 R758–10 Unit
Circular–cage
9
4
6
JEDEC No.B11–88
E678–11A(option)
pF
pF
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter Value
Supply Voltage
Average Anode Current
Between Anode and Cathode
Between Anode and Last Dynode
CHARACTERISTlCS (at 25 )
Parameter Max.Typ.Min.
Luminous(2856K) 400
at 350nm
Cathode Sensitivity
Gain
Anode Sensitivity
Anode Dark Current at 10A/lm
Time Response
After 30min. storage in darkness
NOTE:
Anode characteristics are measured with the voItage distribution ratio shown below.
Radiant
Red/White Ratio (with R–68 filter)
Luminous(2856K)
Radiant
Anode Pulse Rise Time 2
Electron Transit Time
at 632.8nm
at 852.1nm
at 350nm
at 632.8nm
at 852.1nm
100
1500
250
0.001
550
62
63
48
0.53
4.5 10
2.8 10
2.8 10
2.2 10
5
250
4
4
4
0.1 nA
20
2
Unit
Vdc
Vdc
mA
Unit
A/lm
mA/W
A/lm
A/W
ns
ns
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Electrodes
Ratio 1 1 1 1 111111
SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode
Subject to local technical requirements and regulat ions, availability of products included in this promotional material may va r y. Please consult with our sales office.
lnformation furnished by HAMA M ATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are
subject to change without notice. No patent right are granted to any of the circuits described herein.
K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P
1994 Hamamatsu Photonics K.K.
©
PHOTOMULTlPLlER TUBES R636–10, R758–10
Figure 1: Typical Spectral Response Figure 2: Typical Anode Sensitivity and
Typical Gain
TPMSB0069EA TPMSB0070EB
100
10
R758-10
R636-10
R636-10
CATHODE
RADIANT
SENSITIVITY
R758-10
QUANTUM
EFFICIENCY
1
QUANTUM EFFICIENCY(%)
0.1
CATHODE RADIANT SENSITIVITY(mA/W)
3
10
2
10
1
10
GAIN (TYP.)
10
10
ANODE LUMINOUS SENSITIVITY (TYP.)
0
-
1
ANODE LUMINOUS SENSITIVITY(A/lm)
-
2
10
10
10
10
10
10
10
7
6
5
4
GAIN
3
2
-
0.01
200
400
600 800 1000
10
3
500
WAVELENGTH(nm)
Figure 3: Dimensional Outline and Basing Diagram (Unit : mm)
29.0 1.7
8MIN.
3MIN.
PHOTOCATHODE
DY6
DY7
6
7
DY8
8
9
DY9
10
P
11
K
12MIN.
16MIN.
80MAX.
49.0 2.5
94MAX.
DY4
DY3
DY2
DY5
4
3
2
DY1
5
1
DIRECTION
OF LIGHT
BOTTOM VIEW
(BASING DIAGRAM)
TPMSA0027EC
34MAX.
11 PIN BASE
JEDEC No. B11-88
HA COATING
700 1000
SUPPLY VOLTAGE(V)
Socket
(E678 – 11A)
49
38
29
5
10
1500
3.5
33
4
18
TACCA0008EA
1
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.:
Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany:
Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France:
Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom:
North Europe:
Italy:
Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
TPMS1016E03
JUN. 1994