PHOTOMULTlPLlER TUBES
R632, R632 -01
S-1 Spectral Response(QE 0.05% at 1.06 µm <R632-01>)
19mm(3/4 Inch) Diameter , 10–stage, Head–On T ype
GENERAL
Parameter
Spectral Response 400 to 1200 nm
Wavelength of Maximum Response 800 nm
Photocathode
Window Material Borosilicate glass
Dynode
Base
SuitabIe Socket
MateriaI Ag–O–Cs
Minimum Effective Area 15 mm dia.
Structure
Number of Stages
Description/Value Unit
Linear focused
10
12–pin glass base
E678–12L(supplied)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter Value
Supply Voltage
Average Anode Current
Ambient Temperature
Between Anode and Cathode
Between Anode and Last Dynode
CHARACTERISTlCS (at 25 )
Parameter Max.Typ.Min.
Luminous(2856K) 10
Radiant at 800nm
Cathode
Sensitivity
Anode
Sensitivity
Gain
Anode Dark Current(at 4A/lm)
Time Response
NOTE:
Anode characteristics are measured with the voItage distribution ratio shown below.
Red/White Ratio
(with Toshiba IR–D80A)
Quantum Efficiency
at 1.06 m
Luminous(2856K) 10
Radiant at 800nm 950
Anode Pulse Rise Time 2.2 ns
Electron Transit Time
R632
R632–01
R632
R632–01
R632 150
R632–01 800
Unit
1500
250
0.01
-80 to +50
20
1.9
0.1
0.14
0.02
0.05
5
5
510
500
2000
25
Vdc
Vdc
mA
Unit
A/lm
mA/W
%
%
A/lm
A/W
nA
nA
ns
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Electrode
Ratio 1.5 1 1 1 1 1 1 1 1 1 1
SuppIy Voltage : 1250Vdc, K:Cathode, Dy:Dynode, P:Anode
Subject to local technical requirements and regulat ions, availability of products included in this promotional material may va r y. Please consult with our sales office.
lnformation furnished by HAMA M ATSU is believed to be reliabIe. However, no respon sibility is assumed for possibIe inaccuracies or commission. Specifications are
subjected to change without notice. No patent right are granted to any of the circuits described herein.
K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
1996 Hamamatsu Photonics K.K.
©
PHOTOMULTlPLlER TUBES R632,R632–01
Figure 1: Typical Spectral Response Figure 2: Typical Gain and Anode Dark Current
TPMHB0356EA
100
10
CATHODE
RADIANT
SENSITIVITY
R632-01
1
QUANTUM EFFICIENCY (%)
0.1
R632
QUANTUM
CATHODE RADIANT SENSITIVITY (mA/W)
0.01
200 1000400 600
EFFICIENCY
800
WAVELENGTH (nm)
Figure 3: Typical Temperature Characteristics
of Dark Current
TPMHB0358EA
5
-
10
TUBE TYPE: R632-01
-
6
10
-
7
10
8
-
10
TPMHB0357EA
7
10
6
10
5
10
-3
10
-4
10
-5
10
GAIN
GAIN
4
10
3
10
-6
10
-7
10
R632-01 DARK CURRENT
2
10
1
10
0
10
500 600 700 800 1000 1500
R632 DARK CURRENT
-8
10
10
10
ANODE DARK CURRENT (A)
-9
-10
SUPPLY VOLTAGE (V)
Figure 4: Dimensional Outline and Basing Diagram
(Unit : mm)
FACEPLATE
18.6 0.7
15MIN.
Socket
(E678 – 12L)
PHOTOCATHODE
28.6
35
13
2– 3.2
2-R4
-
9
10
-
10
10
ANODE DARK CURRENT (A)
11
-
10
-
12
10
-40 30
-30 -20 -10 0 10 20
AMBIENT TEMPERATURE (°C)
12 PIN BASE
DY9
DY7
DY5
DY10 DY8
6
P
5
4
3
2
1
DY3
SHORT PIN
13MAX. 88 2
7
DY6
8
DY4
9
10
DY2
11
K
12
DY1
BOTTOM VIEW
(BASING DIAGRAM)
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.:
Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany:
Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France:
Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom:
North Europe:
Italy:
Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
360
13
3.7
9.5
3.3
10.5
(8)
TPMHA0360EA
18
2
7
13
18
9
6.7
(23.6)
2
TACCA0047EA
TPMH1142E01
FEB. 1996