HAMAMATSU R5509-42, R5509-72 Datasheet

LOW-LIGHT-LEVEL

NIR

(NEAR INFRARED:1.4µm/1.7µm)

MEASUREMENT

PHOTOMULTIPLIER TUBES

R5509-42/R5509-72

IN THE NIR

APPLICATION EXAMPLE: Photoluminescence measurement

Sample 1

InAlAs/InGaAs

single quantum wells

Photoluminescence spectra emitted
from a sample with different InGaAs
well widths.
This data proves that intensity distrib­ution of the spectrum corresponding
to each quantum well varies with the
excitation light power.

with EXCLUSIVE COOLERS

SAMPLE TEMPERATURE

77K

Sample structure:

InGaAs

InAlAs

InGaAs

50 Å

300 Å

30 Å

30 Å

INTENSITY (RELATIVE)

1100 1200 1300 1400

InAlAs

InGaAs

300 Å

60 Å

60 Å 100 Å

WAVELENGTH (nm)

InAlAs/InGaAs (SQWs)/InP(sub)

InAlAs

InGaAs

InAlAs

300 Å

100 Å

EXCITATION LIGHT:
SHG Nd: YAG (532 nm)
SLIT: 0.2 × 0.2 mm
SAMPLE TEMPERATURE:
77K

1500 1600 1700

Fe doped

3000 Å

InP (100) sub.

EXCITATION LIGHT
POWER: 8µW

EXCITATION LIGHT
POWER: 50µW

EXCITATION LIGHT
POWER: 0.6mW

EXCITATION LIGHT
POWER: 3mW

TPMHB0627EB

OVER VIEW FEATURES

Hamamatsu near infrared photomultiplier tubes (NIR-PMT)
R5509-42 and -72 have newly developed photocathodes with
extended spectral response ranges to 1.4 µm or 1.7 µm
where beyond 1.1 µm have been the limit of conventional
photocathodes. NIR-PMTs the R5509-42 and -72 not only
have these new spectral response ranges, but also have
good features of conventional photomultiplier tubes for fast
time response and photon counting performance, which allow
weak light detection in the near infrared region. They can
solve the problems of low sensitivity and slow time response
in other conventional near infrared detectors like a germani­um diode which is so far commonly used in this range.

TPMHF0435

●Using a "low power excitation light"
allows high-precision measurement not
affected by strong excitation light.

High gain and low noise improve the detection
limit.

●Flat response from visible to near IR
minimize spectral sensitivity correction.

The spectral response covers a wide range from
300 nm to 1.4 µm or 1.7 µm.

●Photoluminescence from a room
temperature sample can be measured.

High sensitivity enables weak light emission
measurement.

●Time resolved measurement in near IR
is realized.

Fast time response (Rise time: 3 ns).

APPLICATION EXAMPLES

Photoluminescence measurement

Sample 2

Undoped SI-InP

Emission from deep levels in a semi­insulating InP substrate at room tem­perature was clearly observed.

Data shows that intensity distribution
of the photoluminescence spectrum
changes with excitation light power.
Using a "low power excitation light" al­lows high-precision measurement not
subject to variations in excitation light
intensity. It is therefore essential to
use "low power excitation light" in or­der to measure emission from deep
levels and total band-to-band transi­tion.

Data was measured with a near infrared
measurement system described later.

SAMPLE TEMPERATURE

300K

room

( )

temperature

INTENSITY (RELATIVE)

SAMPLE TEMPERATURE

77K

INTENSITY (RELATIVE)

EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5 × 0.5 mm
SAMPLE TEMPERATURE: 300K

X1

EXCITATION LIGHT

X1

700 800 900 1000 12001100

800 900 1000 12001100

POWER: 3 mW

WAVELENGTH (nm)

WAVELENGTH (nm)

X10

EXCITATION LIGHT
POWER: 0.6 mW

X10

14001300 16001500 1700

EXCITATION LIGHT
: SHG Nd: YAG (532 nm)
SLIT: 0.5 × 0.5 mm
SAMPLE TEMPERATURE: 77K

EXCITATION LIGHT
POWER: 0.05 mW

EXCITATION LIGHT
POWER: 0.6 mW

EXCITATION LIGHT
POWER: 3 mW

14001300 16001500

TPMHB0621EA

TPMHB0622EA

Sample 3

Undoped SI-GaAs

Emission from deep levels in a semi­insulating GaAs substrate at room
temperatures was clearly observed.

SAMPLE TEMPERATURE

300K

room

( )

temperature

INTENSITY (RELATIVE)

SAMPLE TEMPERATURE

77K

INTENSITY (RELATIVE)

EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5 × 0.5 mm
SAMPLE TEMPERATURE: 300K

EXCITATION LIGHT
POWER: 0.6 mW

EXCITATION LIGHT
POWER: 3 mW

700 800 900 1000 12001100

WAVELENGTH (nm)

EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5 × 0.5 mm
SAMPLE TEMPERATURE: 77K

EXCITATION LIGHT
POWER: 2 nW

14001300 16001500 1700

TPMHB0619EA

Data was measured with a near infrared
measurement system described later.

700 800 900 1000 12001100

WAVELENGTH (nm)

14001300 16001500 1700

TPMHB0620EA

Sample 4

B-Doped Si (111)

l

ow resistivity wafer ρ > 0.02 kΩcm

SAMPLE TEMPERATURE

300K

room

( )

temperature

EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5 × 0.5 mm
SAMPLE TEMPERATURE: 300K

Silicon, the indirect bandgap semicon­ductor, has lower photoluminescence
emission compared with direct band­gap semiconductors such as GaAs,
InP, etc. However, the NIR-PMT has
made it possible to observe a clear
photoluminescence spectra from a
room temperature silicon wafer even
at low power excitation lights.

high resistivity wafer

ρ > 5 kΩcm

SAMPLE TEMPERATURE SAMPLE TEMPERATURE

300K

Clear photolumines­cence spectra can
be observed at room
temperature, even in
faint emission from a
high resistivity silicon

INTENSITY (RELATIVE)

wafer.

Data was measured with a near infrared
measurement system described later.

(room temperature)

EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5 × 0.5 mm
SAMPLE TEMPERATURE: 300K

900 1000 12001100

WAVELENGTH (nm)

EXCITATION LIGHT
POWER: 3 mW

INTENSITY (RELATIVE)

900 1000 12001100

WAVELENGTH (nm)

SAMPLE TEMPERATURE

77K

INTENSITY (RELATIVE)

900 1000 12001100

77K

INTENSITY (RELATIVE)

14001300

TPMHB0625EA

EXCITATION LIGHT
POWER: 0.05 mW

EXCITATION LIGHT
POWER: 0.6 mW

EXCITATION LIGHT
POWER: 3 mW

EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.05 × 0.05 mm
SAMPLE TEMPERATURE: 77K

WAVELENGTH (nm)

EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.05 × 0.05 mm
SAMPLE TEMPERATURE: 77K

900 1000 12001100

WAVELENGTH (nm)

14001300

EXCITATION LIGHT
POWER: 3 mW

EXCITATION LIGHT
POWER: 3 mW

TPMHB0623EA

14001300

TPMHB0624EA

14001300

TPMHB0626EA

Sample 5

InAs/InGaAs

quantum dots structure

Figure shows PL spectrum at the room temperature
from InAs quantum dots covered with InGaAs layer.
Size and uniformity of quantum dots can be estima­ted from the peak wavelength and the FWHM of PL
spectrum.
However, when excitation power is increased, lumi­nescence of shorter wavelength (1200 nm) becomes
strong, and the estimate of exact peak wavelength
and the FWHM becomes impossible.
Therefore, it is important that excitation power must
be kept as weak as possible for precise measure­ment.
For this reason, a high sensitivity detector is re­quired.

Data was measured with a near infrared measurement system described later.

SAMPLE TEMPERATURE

300K

room

( )

temperature

INTENSITY (RELATIVE)

Basic Structure

EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.2 mm / 0.2 mm
SAMPLE TEMPERATURE: 300 K

12001050 1100 1150 13501250 1300 14501400

WAVELENGTH (nm)

InGaAs 15 nm

InGaAs 5 nm

GaAs buffer 300 nm

GaAs (100) substrate

InAs dots

EXCITATION

LIGHT

30 mW
3 mW

0.3 mW

0.03 mW

0.003 mW

TPMHB0664EA

APPLICATION EXAMPLES

Photoluminescence measurement

Sample 6

InGaAsP/InP

p - InP

0.02 µm 2 × 10

16

cm

-3

p + InP 2 µm

p + InP SUB
350 µm

An epitaxial wafer at the room temper­ature can be evaluated.

Photoluminescence measurement in
77K sample is possible at low power
excitation lights from a few to tens of
micro-watts.

Data was measured with a near infrared
measurement system described later.

p - InGaAsP
2 µm

TPMHC0187EB

SAMPLE TEMPERATURE

300K

room

( )

temperature

INTENSITY (RELATIVE)

SAMPLE TEMPERATURE

77K

INTENSITY (RELATIVE)

EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5 × 0.5 mm
SAMPLE TEMPERATURE: 300K

1100 1200 1300 1400

WAVELENGTH (nm)

EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.2 × 0.2 mm
SAMPLE TEMPERATURE: 77K

EXCITATION LIGHT POWER: 8 µW

EXCITATION LIGHT POWER: 50 µW

EXCITATION LIGHT POWER: 0.6 mW

1100 1200 1300 1400

EXCITATION LIGHT POWER: 3 mW

WAVELENGTH (nm)

EXCITATION LIGHT
POWER: 0.6 mW

EXCITATION LIGHT
POWER: 3 mW

1500 1600 1700

1500 1600 1700

TPMHB0617EA

TPMHB0618EA

●Comparison with Ge PIN photodiode

Sample 7

B-Doped Si (111)

l

ow resistivity wafer 0.005-0.2 Ωcm

The R5509-42 PMT provides high detection effi­ciency that allows detecting a distinct photolumi­nescent peak with a high S/N ratio from a room
temperature sample.
The data were taken with a relatively weak excita­tion in order to compare with a germanium detec­tor (Ge PIN PD) which did not show a clear peak.

Sample 8

InGaAsP/InP

InGaAs/InP photoluminescence measurements were
performed under weak excitation conditions in order
to compare the detection limit between the R5509-72
and a Ge PIN photodiode. The result proves that the
R5509-72 allows to detect a peak output in the vicinity
of 1.3 µm which is undetectable with the Ge PIN pho­todiode.
In addition to the improvement in the detection limit at
low light levels in the NIR region, the R5509-72 pro­vides excellent time response, therefore, time-resolved
photometry in the NIR region is now possible.

SAMPLE TEMPERATURE

300K

room

( )

temperature

INTENSITY (RELATIVE)

SAMPLE TEMPERATURE

77K

INTENSITY (RELATIVE)

EXCITATION LIGHT: Ar LASER (514.5 nm)
SAMPLE TEMPERATURE: 300 K

R5509-42

Ge PIN-PD
(77 K)

12001000 1400

WAVELENGTH (nm)

EXCITATION LIGHT: Ar LASER (514.5 nm)
200 µW
SAMPLE TEMPERATURE: 77 K

R5509-72

Ge PIN PD

(77 K)

1200 13001250 1350

WAVELENGTH (nm)

TPMHB0451EC

1400

TPMHB0453EC