HAMAMATSU R550 Datasheet

51 mm (2 Inch) Diameter, 10-stage, Head-On Type

GENERAL

Parameter Description/Value Unit

Spectral Response
Wavelength of Maximum Response

Photocathode
Window Material
Dynode
Base

Suitable Socket

Material
Minimum Effective Area

Structure
Number of Stages

PHOTOMULTIPLIER TUBE

R550

300 to 850 nm Response (S-20)

300 to 850

Multialkali

Borosilicate glass

Box and Grid

14-pin base JEDEC No. B14-38

E678-14A (supplied)

420

46

10

nm
nm

—

mm dia.

—
—
—
—
—

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter Value Unit

Supply Voltage
Average Anode Current

Ambient Temperature

Between Anode and Cathode
Between Anode and Last Dynode

CHARACTERISTICS (at 25°C)

Parameter Min. Unit

Luminous (2856K)

Cathode Sensitivity

Anode Sensitivity
Gain

Anode Dark Current (after 30min. storage in darkness)
Time Response

NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.

Radiant at 420nm
Red/White Ratio (R-68)
Luminous (2856K)
Radiant at 420nm

Anode Pulse Rise Time
Electron Transit Time

100

—
—
20
—
—
—
—
—

VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE

Electrodes
Ratio

Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode

K Dy1G

1

Dy21Dy31Dy41Dy51Dy61Dy7

11

1111

1500

250

0.3

-30 to +50

Typ. Max.

150

64

0.2

100

4.3 × 10

6.7 × 10

Dy8 Dy9 Dy10 P

4
5

10

9.0
70

—
—
—
—
—
—
30
—
—

Vdc
Vdc

mA

°C

µA/lm
mA/W

—
A/lm
A/W

—

nA

ns
ns

Subject to local technical requirements and regulat ions, availability of products included in this promotional material may va r y. Please consult with our sales office.
Information furnished by HAMA M ATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are

subject to change without notice. No patent rights are granted to any of the circuits described herein.

1999 Hamamatsu Photonics K.K.

©

PHOTOMULTIPLIER TUBE R550

Figure 1: Typical Spectral Response

TPMHB0001EB

100

CATHODE
RADIANT
SENSITIVITY

10

QUANTUM

1

QUANTUM EFFICIENCY (%)

0.1

CATHODE RADIANT SENSITIVITY (mA/W)

0.01

EFFICIENCY

200 800600400

WAVELENGTH (nm)

1000

Figure 2: Typical Gain Characteristics

TPMHB0599EA

7

10

6

10

5

10

GAIN

4

10

3

10

2

10

500 600 700 800 1000

SUPPLY VOLTAGE (V)

1200

1400

Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)

FACEPLATE

PHOTO­CATHODE

14 PIN BASE
JEDEC
No. B14-38

51.0±0.5
46MIN.

56.5±0.5

124±2

DY4

147MAX.

DY5

DY3

DY6

DY2

DY7 DY8

6

5

4

3

2
DY1

7

1

8

14

TPMHA0210EB

Socket (Option)

(E678-14A)

19.8

DY9

9

DY10

10

11

P

12

IC

13

G

K

62
56

11
172

30

TACCA0044EB

HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: [phone], Fax: [phone]

U.S.A.:

Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]

Germany:

Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]

France:

Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]

United Kingdom:
North Europe:
Italy:

Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

HOMEPAGE URL http://www.hamamatsu.com

TPMH1247E02
DEC. 1999