HAMAMATSU R2658, R2658P Datasheet

PHOTOMULTIPLIER TUBES

R2658 R2658P

High QE in Near IR Region Due to InGaAs (Cs) Photocathode

For Spectrophotometers with 185 to 1010 nm range,

Fluorescence and Laser Applications and Photon Counting (R2658P)

in the Near Infrared Region, etc.

FEATURES

High QE in Near IR Region ............................... QE 0.13% at 1 µm

Wide Wavelength Range ....................................... 185 to 1010 nm

Low Dark Current .......................................... 1 nA at 1250 V (Typ.)

The R2658 and the R2658P are 28 mm (1-1/8 inch) diameter side-on photomultiplier tubes using a newly developed InGaAs semiconductor photocathode. The InGaAs photocathode is sensitive from UV to near IR radiations (as long as over 1010 nm) longer than wavelength limit of GaAs photocathode, and yet offers low dark current. The dark current is 2 orders lower than the commercial S-1 photocathode. Therefore, they are well suited for low light detection in the near IR region including fluorescence lifetime measurements. Time response, gain, and dimensions are identical with the conventional 28 mm (1-1/8 inch) diameter side-on tubes with a GaAs photocathode. The R2658P is a photon counting version of the R2658 with low dark counts.

(For Photon Counting)

GENERAL

Parameter

Spectral Response Wavelength of Maximum Response

Photocathode Window Material

Dynode

Direct Interelectrode Capacitances

Base Weight

Suitable Socket (Option) Suitable Socket Assembly (Option)

Subject to local technical requirements and regulat ions, availability of products included in this promotional material may var y. P lease consult with our sales office. Information furnished by HAMA M ATSU is believed to be reliabIe. However, n o responsibility is assumed for possible inaccuracies or omissions. Specifications are

subject to change without notice. No patent rights are granted to any of the circuits described herein.

Material Minimum Effective Area

Secondary Emitting Surface Structure Number of Stages Anode to Last Dynode Anode to All Other Electrodes

Description/Value

185 to 1010

400

InGaAs (Cs)

3 × 12

UV glass

Cu-BeO

Circular-cage

9 Approx. 4 Approx. 6

11-pin base

JEDEC No. B11-88

Approx. 45

E678-11A

E717-63

Unit

nm nm

—

— — —

— pF pF

—

g — —

Figure 1: Typical Spectral Response

TPMSB0150EA

100

QUANTUM EFFICIENCY

QUANTUM EFFICIENCY (%)

0.1

CATHODE RADIANT SENSITIVITY (mA/W)

0.01 200100 400 600 800 1000300 500 700 900 1100

2000 Hamamatsu Photonics K.K.

WAVELENGTH (nm)

CATHODE RADIANT SENSITIVITY

PHOTOMULTIPLIER TUBES R2658, R2658P

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter Value Unit

Supply Voltage

Between Anode and Cathode

Between Anode and Last Dynode Average Anode Current Ambient Temperature

1500

250

-80 to +50

CHARACTERISTICS (at 25°C)

Parameter Min. Unit

Quantum Efficiency Luminous

at 330 nm at 1000 nm

at 194 nm Cathode Sensitivity

Radiant

at 254 nm

at 400 nm

at 633 nm

at 852 nm

at 1000 nm

Red/White Ratio Luminous

at 194 nm Anode

Sensitivity

Radiant

at 254 nm

at 400 nm

at 633 nm

at 852 nm

at 1000 nm

Gain Anode Dark Current

After 30 minute storage in the darkness Anode Dark Count (for the R2658P) ENI (Equivalent Noise Input)

Time Response

Anode Current Stability

Anode Pulse Rise Time

Electron Transit Time Current Hysteresis Voltage Hysteresis

Typ.

—

0.02 50 — — — — —

0.16

0.25

5 — — — — — — —

— —

— — —

0.13 100

20 23 40 19

7.6 1

0.4

3.2 × 10

3.7 × 10

6.4 × 10

3.0 × 10

1.2 × 10

1.6 × 10

1.6 × 10 1

1.1 × 10

2.0 20

2 2

-15

Max.

— — — — — — — — — — —

—

— 10

300

— — —

— —

Vdc Vdc

µA °C

% µA/lm mA/W mA/W mA/W mA/W mA/W mA/W

—

A/lm A/W A/W A/W A/W A/W A/W

—

s-1(cps)

ns ns

NOTES

A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at

a distribution temperature of 2856 K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode.

C: Red/white ratio is the quotient of the cathode current

measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same condition as Note B.

D: Measured with the same light source as Note B and with

the voltage distribution ratio shown in Table 1 below.

E: Measured with the same supply voltage and the voltage

distribution ratio as Note D after 30 minute storage in the darkness.

F: Measured at the voltage producing the gain of 1 × 106

and the voltage distribution ratio shown in table 1 below.

The photocathode is cooled at -20 °C. G: ENI is an indication of the photo-limited signal-to-noise

ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube.

2q•ldb•G•∆f

ENI =

where q = Electronic charge (1.60 × 10 ldb = Anode dark current (after 30 minute storage) in amperes G = Gain ∆f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response.

H: The rise time is the time for the output pulse to rise from

10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse.

J: The electron transit time is the interval between the

arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated.

K. Hysteresis is temporary instability in anode current after

light and voltage are applied.

-19

coulomb)

Table 1: Voltage Distribution Ratio

Electrodes Distribution Ratio

Supply Voltage= 1250 Vdc K: Cathode, Dy: Dynode, P: Anode

K Dy11Dy21Dy31Dy41Dy51Dy61Dy71Dy81Dy9

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