HAMAMATSU R1893 Datasheet

PHOTOMULTIPLIER TUBE

R1893

10 mm (3/8 Inch) Diameter, 8-Stage,

Cs-Te Photocathode, Head-On Type

GENERAL

Parameter Description/Value Unit

Spectral Response
Wavelength of Maximum Response

Photocathode
Window Material
Dynode
Base

Suitable Socket

Material
Minimum Effective Area

Structure
Number of Stages

160 to 320

240

Cs-Te

8

Synthetic Silica

Linear-focused

8

11-pin glass base

E678-11N (supplied)

nm
nm

—

mm dia.

—
—
—
—
—

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter Value Unit

Supply Voltage
Average Anode Current

Ambient Temperature

Between Anode and Cathode
Between Anode and Last Dynode

CHARACTERISTICS (at 25°C)

Parameter Min. Unit

Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30min. storage in darkness)

Time Response

NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.

Radiant at 254nm
Radiant at 254nm

Anode Pulse Rise Time
Electron Transit Time

—

1.2 × 10
—
—
—
—

VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE

Electrodes
Ratio

Supply Voltage: 1250Vdc, K: Cathode, Dy: Dynode, P: Anode

K Dy12Dy2 Dy32Dy41Dy51Dy61Dy7

11

Dy8 P

11

3

1500

250

0.01

-80 to +50

Typ. Max.

24

3.6 × 10

1.5 × 10

3
5

0.5

0.8

7.8

—
—
—

2.5
—
—

Vdc
Vdc

mA

°C

mA/W

A/W

—

nA

ns
ns

Subject to local technical requirements and regulat ions, availability of products included in this promotional material may var y. P lease consult with our sales office.
Information furnished by HAMA M ATSU is believed to be reliable. However, n o responsibility is assumed for possible inaccuracies or omissions. Specifications are

subject to change without notice. No patent rights are granted to any of the circuits described herein.

1999 Hamamatsu Photonics K.K.

©

PHOTOMULTIPLIER TUBE R1893

Figure 1: Typical Spectral Response

TPMHB0610EA

100

10

QUANTUM
EFFICIENCY

1

QUANTUM EFFICIENCY (%)

0.1

CATHODE RADIANT SENSITIVITY (mA/W)

0.01
150100 200 250 300 350 400

WAVELENGTH (nm)

CATHODE
RADIANT
SENSITIVITY

Figure 2: Typical Gain Characteristics

TPMHB0611EA

8

10

7

10

6

10

5

10

GAIN

4

10

3

10

2

10

200

SUPPLY VOLTAGE (V)

1000 1200

700500

1500

2000

Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)

10.5 ± 0.5

FACEPLATE

PHOTOCATHODE

11 PIN BASE

8MIN.

10MAX. 45.0 ± 1.5

DY5

DY3

DY1

DY7

5

4

3

2

IC

SHORT PIN

P

DY8

6

7

10

11

1

K

8

9

DY2

DY6

DY4

TPMHA0442EA

Socket

(E678-11N)

4.3

10.5

9.5

9.5

3

11

3

TACCA0043EA

HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: [phone], Fax: [phone]

U.S.A.:

Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]

Germany:

Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]

France:

Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]

United Kingdom:
North Europe:
Italy:

Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

TPMH1260E01
MAR. 1999