HAMAMATSU R1767 Datasheet

PHOTOMULTlPLlER TUBE

R1767

S-1 Spectral Response, High Infrared Sensitivity (QE0.08% at 1.06 µm)

38mm(1-1/2 Inch) Diameter, 10-Stage, Head-On Type

GENERAL

Parameter

Spectral Response 400 to 1200 nm
Wavelength of Maximum Response 800 nm

Photocathode
Window Material Borosilicate glass
Dynode
Base

SuitabIe Socket

MateriaI Ag–O–Cs
Minimum Effective Area 34 mm dia.

Structure
Number of Stages

12–pin base JEDEC No. B12–43

Description/Value Unit

Circular–cage

10

E678–12A (supplied)

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter Value

Supply Voltage
Avarage Anode Current

Ambient Temperature

Between Anode and Cathode
Between Anode and Last Dynode

1500

250

0.01

-30 to +50

CHARACTERISTlCS (at 25 )

Parameter Max.Typ.Min.

Cathode Sensitivity

Anode Sensitivity
Gain

Anode Dark Current (at 4 A/lm)
Time Response

NOTE:

Anode characteristics are measured with the voItage distribution ratio shown below.

Luminous (2856K)
Radiant at 800nm
Red/White Ratio

(Toshiba IR–D80A filter)
Quantum Efficiency at 1.06 m

Luminous (2856K) 1
Radiant at 800nm

Anode Pulse Rise Time 2.2 ns
Electron Transit Time

10

25

2.4

0.14

0.08
5

480

5

210

7000 20000

37

VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE

Electrodes
Ratio 2 1 1 1 1 1 1 1 1 1 1

SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode

K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P

Unit

Vdc
Vdc

mA

°C

Unit

A/lm

mA/W

%
A/lm
A/W

nA

ns

Subject to local technical requirements and regulat ions, availability of products included in this promotional material may va r y. Please consult with our sales office.
Information furnished by HAMA M ATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are

subject to change without notice. No patent rights are granted to any of the circuits described herein.

1999 Hamamatsu Photonics K.K.

©

PHOTOMULTlPLlER TUBE R1767

Figure 1: Typical Spectral Response

TPMHB0288EA

100

CATHODE

10

1

RADIANT
SENSITIVITY

QUANTUM EFFICIENCY (%)

0.1

QUANTUM
EFFICIENCY

CATHODE RADIANT SENSITIVITY (mA/W)

0.01
200 400 600 800 1000

WAVELENGTH (nm)

Figure 2: Dimensional Outline and Basing Diagram (Unit: mm)

FACEPLATE

PHOTO­CATHODE

12 PIN BASE
JEDEC
No. B12-43

38 1

34MIN.

99 2

116MAX.

DY10

P

6

7

5

2

8

11

1

12

K

DY7

DY5

DY9

4
3

DY3

DY1

BOTTOM VIEW

(BASING DIAGRAM)

DY8

DY6

9

10

DY4

DY2

TPMHA0228EA

Socket

(E678 – 12A)

2- 3.2

47
40
17

34

5

15

8

37.3 0.5

HOMEPAGE URL http://www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: [phone], Fax: [phone]

U.S.A.:

Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]

Germany:

Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]

France:

Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]

United Kingdom:
North Europe:
Italy:

Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

TACCA0009EB

TPMH1116E02
DEC. 1999