HAMAMATSU P9217 Datasheet

INFRARED DETECTOR

PbS photoconductive detector

P9217

Infrared detectors utilizing photoconductive effects

P9217 is a PbS photoconductive detector with greatly improved stability and resistance to high temperatures when compared to conventional types.

Features Applications

l

Resistance to high temperatures, stability

l

Lower temperature detection limit: 100 ˚C approx.

l

Radiation thermometers

l

Flame monitors

l

Water content analyzers

l

Food ingredient analysis

l

Spectrophotometers

Accessories (Optional)

l

Preamplifier for PbS/PbSe photoconductive detector C3757-02

l

Power supply for amplifier C3871

■ Specification

Parameter Specification Unit

Window material Borosilicate glass ­Package TO-5 ­Cooling Non-cooled ­Active area 1 × 5 mm

■ Absolute maximum ratings

Parameter Symbol Value Unit

Supply voltage - 100 V
Operating temperature Topr -30 to +65 °C
Storage temperature Tstg -55 to +65 °C

■ Electrical and optical characteristics (T=25 °C)

Parameter Symbol Condition Min. Typ. Max. Unit

Peak sensitivity wavelength
Cut-off wavelength
Photo sensitivity *

Detectivity D

Rise time tr 0 to 63 % - - 250 µs
Dark resistance Rd 0.05 - 1 M
*1: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance.

1

p-2.2-µm

λ

c

λ

S

*

p, Vs=15 V 4 × 10

λ=λ

(500, 600, 1) 5 × 10
(λp, 600, 1) - 1 × 10

- 2.9 - µm

4

8

1 × 10
1 × 10

5

9

11

-V/W

-

-

cm · Hz

Ω

1/2

/W

PRELIMINARY DATA

Jun. 2003

1

1

PbS photoconductive detector

P9217

■ Spectral response

100

80

60

40

RELATIVE VALUE (%)

20

0

1423 5

WAVELENGTH (µm)

■ S/N vs. chopping frequency

3

10

LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 µW/cm
SUPPLY VOLTAGE: 15 V
tr: 200 µs

S/N

2

(Typ. T=25 ˚C)

(Typ. Ta=25 ˚C)

■ S/N vs. supply voltage

NOISE

30

(Typ. Ta=25 ˚C)

2

40 50 60

8

7

6

5

4

3

2

1

800

SIGNAL

600

400

SIGNAL (µV)

200

00

0

KIRDB0301EA KIRDB0046EA

LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 µW/cm
CHOPPING FREQUENCY: 600 Hz
FREQUENCY BANDWIDTH: 60 Hz

10 20

SUPPLY VOLTAGE (V)

If voltage of higher than 60 V is applied,
the noise increases exponentially, de­grading the S/N. The device should be
operated at 60 V or less.

■ Photo sensitivity temperature characteristic

3

10

(Typ.)

NOISE (µV)

S

2

10

RELATIVE S/N

N

1

10

1

10

CHOPPING FREQUENCY (Hz)

2

10

3

10

KIRDB0047EB KIRDB0302EA

Increasing the chopping frequency re­duces the 1/f noise and results in an S/N
improvement. The S/N can also be im­proved by narrowing the noise bandwidth
using a lock-in amplifier.

■ Dark resistance, rise time temperature characteristics

3

10

RISE TIME

2

10

DARK
RESISTANCE

(Typ.)

RELATIVE VALUE (%)

2

10

LIGHT SOURCE: BLACK BODY 500 K

RELATIVE SENSITIVITY (%)

INCIDENT ENERGY: 4.8 µW/cm
CHOPPING FREQUENCY: 600 Hz
SUPPLY VOLTAGE: 15 V

1

10

-10

0 10203040506070

ELEMENT TEMPERATURE (˚C)

Cooling the device enhances its sensi­tivity, but the sensitivity also depends
on the load resistance in the circuit.

■ Photo sensitivity linearity

2

10

1

10

0

10

-1

10

RELATIVE OUTPUT

-2

10

(Typ. Ta=25 ˚C, FULLY ILLUMINATED)

2

1

10

0 10203040506070-10

ELEMENT TEMPERATURE (˚C)

10

KIRDB0303EA KIRDB0050EA

DEPENDENT ON NEP

-3

-9

10

-8

10

INCIDENT ENERGY (W/cm2)

-7

-6

-5

10

10

10

-4

10

By making the incident light spot smaller
than the active area, the upper limit of
the linearity becomes lower.

2

2