HAMAMATSU P8212 Datasheet

MODULE

Light emitting/receiving module

P8212

Integrated light emitting/receiving elements for automobile VICS

P8212 is a light emitting/receiving module consisting of an LED array and a photodiode in the same small package. The width of
this module is minimized so that automobile antennas can be designed thin. A lens is also fitted onto the photodiode to increase
the amount of input light. Although the lens makes the photodiode directivity narrow, this problem was solved by separating the
photodiode optical axis from the LED axis to match the light emitting and receiving areas required for VICS.

Features

l

Small package

l

Lens design optimized for light emitting/receiving timings

l

Cylindrical lens with less pickup error during component
mounting

Absolute maximum ratings (Ta=25 °C)

■

Parameter Symbol Value Unit

Photodiode reverse voltage VR Max. 20 V
LED reverse voltage VR Max. 4 V
LED pulse forward current *
Operating temperature Topr -30 to +95
Storage temperature Tstg -40 to +115
*1: 64 kHz, duty ratio=50 %, 4 ms ON, average duty ratio=2.5 %

Electrical and optical characteristics for photodiode (Ta=25 °C)

■

parameter Symbol Condition Min. Typ. Max. Unit

Spectral response range
Peak sensitivity wavelength

Photo sensitivity S

Short circuit current I
Dark current I

Cut-off frequency fc

Terminal capacitance Ct VR=12 V, f=1 MHz - 40 - pF

Directivity at half width -



I

FP

l

lp

l=lp
l=850 nm

100 lx, 2856 K 27 33 -

SC

VR=12 V - 1 10 nA

D

VR=12 V, RL=1 kW
l=850 nm, -3dB

Direction in long side - ±55 -

Direction in short side

Applications

l

Automobile VICS

1300 mA

- 480 to 1100 - nm

- 960 - nm
520 620 - mA/W
460 540 - mA/W

- 4 - MHz

- +35, -18 -

°C
°C

mA

degree

Electrical and optical characteristics for LED (Ta=25 °C)

■

parameter Symbol Condition Min. Typ. Max. Unit

Peak emission wavelength
Spectral half width
Pulse forward voltage V
Reverse current I
Pulse radiant intensity Iep IFP=900 mA *
Cut-off frequency fc IF=100 mA±10 mA

Directivity at half width -

*2: Average peak value in pulse operation at 64 kHz, 50 % duty ratio, 4 ms ON

lp
Dl

IF=100 mA 830 850 900 nm
IF=100 mA - 40 - nm
IFP=900 mA *

FP

VR=4 V - - 10

R

Direction in long side - ±30 -

Direction in short side

p-p

5.5 6.3 7.4 V

1400 1800 - mW/sr

- 20 - MHz

-±13-

mA

degree

1

Light emitting/receiving module

P8212

■ Emission spectrum

100

80

60

40

20

RELATIVE RADIANT OUTPUT (%)

0

800700

WAVELENGTH (nm)

100

90

80

70

60

50

40

30

20

10

RELATIVE RADIANT OUTPUT/RELATIVE SENSITIVITY(%)

0

-40˚ -30˚ -10˚ 10˚ 30˚

PHOTODIODE

-20˚ 0˚ 20˚ 40˚

(Typ. Ta=25 ˚C)

900 1000

(Typ. Ta=25 ˚C)

LED

KLEDB0114EA

■ Radiant intensity vs. pulse forward current (LED)

4000

3000

2000

1000

RADIANT INTENSITY (mW/sr)

0

0 200 600 1000 1400

400 800 1200 1600

PULSE FORWARD CURRENT (mA)

(Typ. Ta=25 ˚C)

KPCB0023EA

■ Directivity: direction in long side■ Directivity: direction in short side

100

90

80

70

60

50

40

30

20

10

RELATIVE RADIANT OUTPUT/RELATIVE SENSITIVITY(%)

0

-40˚ -30˚ -10˚ 10˚ 30˚

LED

PHOTODIODE

-20˚ 0˚ 20˚ 40˚

(Typ. Ta=25 ˚C)

ANGLE

■

Pulse forward voltage vs. pulse forward current (LED)

10

9

8

7

6

5

4

3

2

PULSE FORWARD VOLTAGE (V)

1

0

0 200 600 1000 1400

400 800 1200 1600

(Typ. Ta=25 ˚C)

PULSE FORWARD CURRENT (mA)

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.

KPCB0021EA KPCB0022EA

KPCB0024EA

■ Dimensional outline (unit: mm)

(22 ×) 0.5 0.8 ± 0.2

0.3 ± 0.1

PHOTODIODE INSIDE

LINE FIGURE

33.5 ± 0.2

(2 ×) 6.90 ± 0.1

(18 ×) 2.30 ± 0.1

19.1 ± 0.2 MOLD BURR 0.3 MAX.

LED INSIDE

LINE FIGURE

5.9 ± 0.2

3.0 ± 0.1

ANGLE

8.9 ± 0.2

2.0 MAX.0.25 ± 0.1

5.6 ± 0.2

1.10 ± 0.1

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Her tfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

2

3.5 MAX.

MOLD BURR AREA

0.1 ± 0.1

0.7 ± 0.2

1.5 ± 0.2

KPCA0008EA

Cat. No. KACC1057E01
Jan. 2001 DN