HAMAMATSU P8079-01, P8079-11, P7163, P8079-21 Datasheet

INFRARED DETECTOR

InAs photovoltaic detector

P8079 series

,

P7163

High-speed, low noise photovoltaic IR detectors

InAs photovoltaic detectors cover a spectral response range equivalent to that of PbS detectors, but provide higher response speed and
lower noise.

Features

l

Thermoelectrically cooled type: high sensitivity
and high-speed response

l

Metal dewar type available for low light measurement

l

Long-wavelength cut-off of up to 3.8 µm

l

Easy-to-use detector/preamp modules available

Applications

l

Gas analysis

l

Infrared radiation measurement

l

Infrared spectrophotometry

l

FTIR

Accessories (Optional)

l

Heatsink for one-stage TE-cooled type A3179

l

Heatsink for two-stage TE-cooled type A3179-01

l

Temperature controller C1103-04

l

Infrared detector module with preamp

l

Custom amplifiers for InAs photovoltaic detector

P4631-01 (P8079-21)

Specifications / Absolute maximum ratings

■

Dimensional

Type No.

P8079-01
P8079-11
P8079-21
P7163

* Window material S: sapphire glass

Electrical and optical characteristics (Typ. unless otherwise noted)

■

Type No.

P8079-01 25 3.45 3.8 1.1 10 1.5 × 1092 × 1094.4 × 10
P8079-11 -10 3.30 3.6 80 7.5 × 1091 × 10108.9 × 10
P8079-21 -30 3.25 3.5 200 1.5 × 10102 × 10104.4 × 10
P7163 -196 3.00 3.1

outline/

Window

material *

/S TO-5 Non-cooled -

➀

/S TO-8

➁

/S Metal dewer LN

➂

Measurement

condition

Element

temperature

T

(°C) (µm) (µm) (A/W)

Package Cooling

One-stage TE-cooled
Two-stage TE-cooled

Peak

sensitivity

wavelength

wavelength

l

p

Cut-off

lc

2

sensitivity

Photo

S

l=lp

1.3

Active

area

(mm) (mW) (V) (°C) (°C)

f1

resistance

Thermistor

power

dissipation

0.2

-

Shunt

Rsh

(W)

1 × 1053.5 × 10116 × 10111.5 × 10

(lp, 1200, 1)

Min.

(cm·Hz

Absolute maximum ratings

Reverse

voltage

V

R

0.5 -40 to +60 -55 to +60

*

D

Typ.

1/2

/W)

(cm·Hz

1/2

(W/Hz

/W)

Operating

temperature

NEP

l=lp

Storage

temperature

Topr

Rise time

V

R

=50 W

R

L

0 to 63 %

1/2

)(µs) (pF)

-11

-12

-12

-13

0.1 80

0.1

tr

=0 V

Tstg

Terminal

capacitance

Ct

VR=0 V

f=1 MHz

10

5

150

1

/W)

1/2

D* (λ,1200,1) (cm · Hz

10

10

10

10

10

12

11

10

9

8

1

P7163 (T= -196 ˚C)

P8079-21 (T= -30 ˚C)

P8079-01 (T=25 ˚C)

2345

InAs photovoltaic detector

■ Spectral response■ Spectral response (D*)

(Typ.)

PHOTO SENSITIVITY (A/W)

6

P8079 series, P7163

1.4

1.2

1.0

0.8

T= -10 ˚C

0.6

0.4

T= -30 ˚C

0.2

0

2.01.51.0

2.5 3.0 4.03.5 4.5

(Typ.)

T=25 ˚C

WAVELENGTH (µm)

■ S/N vs. chopping frequency (P7163)

3

10

LOAD RESISTANCE: 1 kΩ
SUPPLY VOLTAGE: 0 V
ELEMENT TEMPERATURE: -196 ˚C

S

2

10

N

1

10

S/N (ARB. UNIT)

0

10

10

2

10

3

10

4

CHOPPING FREQUENCY (Hz)

10

WAVELENGTH (µm)

KIRDB0165EA KIRDB0183EA

■ Shunt resistance vs. element temperature

(Typ.)

5

6

10

KIRDB0064ED KIRDB0182EA

1 kΩ

100 Ω

10 Ω

SHUNT RESISTANCE

1 Ω

-20-40

ELEMEMT TEMPERATURE (˚C)

02040

2