HAMAMATSU P6606-110, P6606-305, P6606-310, P6606-320, P6606-210 Datasheet

INFRARED DETECTOR

InSb photoconductive detector

P6606 series

Thermoelectrically cooled detectors capable of long-term measurements

Features

l

Thermoelectric cooling ensures high speed and high
sensitivity up to 6.5 µm.

l

Photoconductive element that changes electrical
resistance by input of IR radiation

l

Easy-to-use detector/preamp modules are also available.

Applications

l

Environment measurements (gas analysis, etc.)

l

Radiation thermometers (5 µm band)

l

FTIR

l

IR laser detection

Accessories (optional)

l

Heatsink for one-stage TE-cooled type A3179

l

Heatsink for two-stage TE-cooled type A3179-01

l

Heatsink for three-stage TE-cooled type A3179-04

l

Temperature controller C1103-05 (-75 to -25 ˚C)

l

Preamp C5185

l

Infrared detector module with preamp

Specifications / Absolute maximum ratings

■

Dimensional

Type No.

P6606-110
P6606-210

outline/

Window

material *

/S TO-8

➀

Package Cooling

1

One-stage TE-cooled
Two-stage TE-cooled

P6606-305 0.5 × 0.5 20
P6606-310 1 × 1 40

/S TO-3

➁

Three-stage TE-cooled

P6606-320

Active

area

Thermistor

power

dissipation

(mm) (mW) (A) (mA) (°C) (°C)

1 × 1

0.2

2 × 2

*1: Window material S: Sapphire glass

Absolute maximum ratings

TE-cooler

power

dissipation

1.5

1.0

Allowable

current

40

1.0
60

C1103-07 (-30 to +20 ˚C)

C4631-03 (P6606-310)

Operating

temperature

Topr

Storage

temperature

Tstg

-40 to +60 -55 to +60

Electrical and optical characteristics (Typ. unless otherwise noted)

■

Photo

sensitivity

S

l=lp

Vs=15 V

(V/W)

(cm·Hz

150 5 × 10

(500, 1200, 1)

Min.

1/2

/W)

7

9

9

8

Type No.

Measurement

condition

Element

temperature

T

(°C)

Peak

sensitivity

wavelength

Cut-off

wavelength

lp

(mm) (mm)

lc

P6606-110 -10 6.7 10 7 × 10
P6606-210 -30 6.5 50 1.5 × 10
P6606-305 2500 1 × 10
P6606-310 650 1 × 10

-60

5.5

6.3

P6606-320

8

*

D

(cm·Hz

Typ.

2 × 10
5 × 10
2 × 10
2 × 10
1 × 10

(lp, 1200, 1)

1/2

/W) (cm·Hz

8

8

9

9

9

*

D

1/2

1 × 10

2.5 × 10
1 × 10
1 × 10

5 × 10

/W)

9

10

10

9

9

Rise time

tr

0 to 63 %

(ms) (W)

0.4

Dark

resistance

Rd

20
25

150

80
80

1

■■

■

Spectral response

■■

InSb photoconductive detector

■■

■

D* vs. element temperature

■■

P6606 series

11

10

1

2

10

10

9

10

D* (λ, 1200, 1) (cm · Hz /W)

8

10

32

4567

WAVELENGTH (µm)

■■

■

Thermistor temperature characteristic

■■

1 MΩ

(Typ. T= -60 ˚C)

(Typ.)

KIRDB0166EB

11

10

1

2

10

10

9

10

D* (λ, 1200, 1) (cm · Hz /W)

8

10

-40-50-60

-30 -20 -10 0

ELEMENT TEMPERATURE (˚C)

■■

■

Cooling characteristics of TE-cooler

■■

[Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W (one and two-stage TE-cooler),

40

(Typ.)

KIRDB0167EA

1.2 ˚C/W (three-stage TE-cooler)]

100 kΩ

RESISTANCE

10 kΩ

1 kΩ

-20 0 20 40

-40-60-80

ELEMENT TEMPERATURE (˚C)

KIRDB0168EA

ELEMENT TEMPERATURE (˚C)

-20

-40

-60

-80

20

0

ONE-STAGE
TE-COOLED TYPE

TWO-STAGE
TE-COOLED TYPE

THREE-STAGE
TE-COOLED TYPE

0.40

0.8 1.2 1.6

TE-COOLER CURRENT (A)

KIRDB0177EA

2