HAMAMATSU P5274-01, P2748-42, P2748-40, P5274, P3257-50 Datasheet

INFRARED DETECTOR

MCT photoconductive detector

P2748/P5274 series

,

P3257-50

Dewar type detector with high sensitivity and high-speed response in long wavelength range

Features

l

Choice of spectral response range (up to 25 µm)
The band gap can be adjusted by controlling the composition
ratio of HgTe and CdTe. Utilizing this fact, various types are
available in different spectral characteristics.

l

Photoconductive element that decreases its resistance
by input of infrared light

l

Micro-cooled type available
This type of cooling does not require pour-filled liquid
nitrogen.

l

Custom devices available
Custom devices not listed in this catalog are also available
with different spectral response, active area sizes and
number of elements.
Glass dewar type not requiring repumping is also provided.

■ General rating / Absolute maximum ratings

Dimensional

Type No.

P2748-40
P2748-41
P2748-42 0.25 × 0.25 20
P5274
P5274-01
P3257-50

outline/

Window

materi al *

/Z

➀

/Z

➁

/Z

➀

/K

➀

/Z Stirling type metal Micro-cooled 1 × 1 - 40 -40 to +55 -45 to +55

➂

Package Cooling



Side-on type metal dewar

Head-on type metal dewar

Side-on type metal dewar

LN

Applications

l

FTIR

l

Infrared spectrophotometer

l

Thermal imaging

l

Remote sensing

l

2

laser detection

CO

Accessories (Optional)

l

Valve operator A3515

l

Amplifiers for dewar type MCT photoconductive detector

l

Power supply for amplifier C3871

l

Infrared detector module with preamp P7752-10

Nitrogen

Active area

(mm)

1 × 1 40
1 × 1 40

1 × 1 40
1 × 1

maintenance

time
Min.

(h) (mA)

12

Absolute maximum ratings

Allowable

current

20

Operating

temperature

Topr

(°C)

-40 to +60 -55 to +60

C5185

Storage

temperature

Tstg

(°C)

■ Electrical and optical characteristics (Typ. unless otherwise noted)

Measurement

condition

Ele ment

Type No.

P2748-40 1000 2.5 × 10
P2748-41 1000 2.5 × 10
P2748-42
P5274 14 17 500 2 × 10
P5274-01 17 22 250 1 × 10
P3257-50
*1: Window material K: KRS-5, Z: ZnSe
*2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.

temperature

T

(°C) (µm) (µm) (V/W)

-196

Peak

sensitivity

wavelength

lp

12 14

12 14 1000 1 × 10

Cut-off

wavelength

lc

Photo

sensitivity *

S

l=lp

10000

2

(cm·Hz

1 × 10

*

D

(500, 1200, 1)

Min.

1/2

/W)

(cm·Hz

10

2 × 10

9

1 × 10

9

5 × 1091.0 × 10101.0 × 10

10

2 × 10

Typ.

1/2

*

D

(lp, 1200, 1)

/W) (cm·Hz

10

10

10

1/2

/W)

4.0 × 10

1.5 × 10106.7 × 10

4.0 × 10102.5 × 10

10

NEP
l=lp

(W/Hz

6.3 × 10

Rise
time

tr

0 to 63 %

1/2

)(µs)

-12

-12

0.6 40

-12

-12

0.6 30

-11

0.4 100

-12

0.6 40

Dark

resist ance

Rd

(W)

1

MCT photoconductive detector

P2748/P5274 series, P3257-50

■ Spectral response

11

10

P2748-40

10

10

/W)

1

2

9

10

D* (cm · Hz

8

10

0 5 10 15 20 25

Spectral response can be shifted upon
request.

P5274

P5274-01

WAVELENGTH (µm)

(Typ. T= -196 ˚C)

KIRDB0072EC

■ S/N vs. bias current

20

16

12

8

RELATIVE VALUE

4

0 5 10 20 25

BIAS CURRENT (mA)

The detector must be operated in a range
where the D* becomes Max.

(Typ.)

D*

S

N

15

KIRDB0073EB

■ Noise frequency characteristic

100

1

2

10

NOISE (nV/Hz )

1

10 100

FREQUENCY (Hz)

(Typ. )

1000 10000

KIRDB0074EC

■ Measurement circuit

CHOPPER

1200 Hz

BLACK BODY

500 K

DETECTOR

BAND-PASS

FILTER

fo=1200 Hz
∆f=120 Hz
INCIDENT ENERGY: 2.64 µW/cm

r.m.s.

METER

KIRDC0007EA

2

2