LED
Infrared LED
L1909
TO-46 type GaAlAs infrared LED
Features
l
High radiant output power
l
Direct modulation possible
l
High reliability and long life
Absolute maximum ratings (Ta=25 °C)
■
Parameter Symbol Condition Value Unit
FP
F
R
Pulse width=10 µs
Duty ratio=1 %
Forward current I
Reverse voltage V
Pulse forward current I
Operating temperature Topr -30 to +85
Storage temperature Tstg -40 to +100 *
* Guaranteed to resist temperature cycle test of up to 5 cycles.
Applications
l
Auto-focus
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Automatic control systems
l
Optical switches
l
Mark sensors
l
Optical remote control
80 mA
5 V
1.0 A
C
°
C
°
■
Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol Condition Min. Typ. Max. Unit
Peak emission wavelength
Spectral half width
Forward voltage V
Pulse forward voltage V
Reverse current I
Radiant flux
Radiant illuminance P
Rise time tr IF=50 mA, 10 to 90 % - 0.45 0.7 µs
Fall time tf IF=50 mA, 90 to 10 % - 0.45 0.7 µs
λ
∆λ
φ
IF=50 mA 870 890 920 nm
p
IF=50 mA - 80 - nm
F
IF=50 mA - 1.4 1.5 V
FP
IF=1.0 A - 2.8 3.4 V
R
VR=5 V - - 5 µA
IF=50 mA 8 10 - mW
e
E
IF=50 mA - 1.0 - mW/cm
2
Infrared LED
1.0 1.5 2.0 2.5 3.0
1
10
100
1000
FORWARD VOLTAGE (V)
FORWARD CURRENT
(mA)
(Typ. Ta=25 ˚C, tw=100 µs, 1 %)
L1909
■ Emission spectrum
100
80
60
40
20
(Typ. Ta=25 ˚C, IF=50 mA)
■ Radiant flux vs. forward current
(Typ. Ta=25 ˚C, tw=100 µs, 0.1 %)
RADIANT FLUX (mW)
1000
100
10
1
RELATIVE RADIANT OUTPUT (%)
0
700 800 900 1000
WAVELENGTH (nm)
KLEDB0117EB
0.1
1 10 100 1000
FORWARD CURRENT (mA)
■ Directivity ■ Radiant output vs. ambient
20˚ 10˚ 0˚ 10˚ 20˚
100
30˚
40˚
50˚
60˚
70˚
80˚
90˚
%
80 %
60 %
40 %
20 %
RELATIVE RADIANT OUTPUT (%)
(Typ. Ta=25 ˚C)
30˚
40˚
50˚
60˚
70˚
80˚
90˚
KLEDB0118EA KLEDB0150EA
temperature
+3
+2
+1
0
-1
-2
-3
-4
RELATIVE RADIANT OUTPUT (dB)
-5
-40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE (˚C)
(Typ. IF=50 mA)
■ Forward current vs. forward voltage
KLEDB0120EA
■ Allowable forward current
vs. ambient temperature
100
80
60
40
20
RELATIVE ALLOWABLE FORWARD CURRENT (%)
0
-40 -20 0 20
AMBIENT TEMPERATURE (˚C)
40 60 80 100
KLEDB0121EA
(Typ.)
KLEDB0027EB
■ Allowable forward current vs. duty ratio
10
PULSE WIDTH=1 µs
1
100 µs
0.1
ALLOWABLE FORWARD CURRENT (A)
0.01
0.01
0.1 1 10 100
DUTY RATIO (%)
(Typ.
10 µs
Ta=25
˚C)
KLEDB0038EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
■ Dimensional outline (unit: mm)
5.4 ± 0.1
CLEAR EPOXY RESIN
0.45
LEAD
COMMON TO CASE
4.2 ± 0.1
2.54 ± 0.2
2.3 ± 0.3
13.5
1.12 ± 0.1
KLEDA0009ED
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KLED1014E01
Apr. 2001 DN