HAMAMATSU K3413-09, K3413-08, K3413-05 Datasheet

UV TO IR DETECTOR

Two-color detector

K3413-05/-08/-09

Wide spectral response range from UV to IR

K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the
same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler
maintains a constant temperature during operation, allowing precision measurement with an improved S/N ratio.

Features

l

Wide spectral response range

l

Allows same optical path design

l

One-stage thermoelectrically cooled type

General ratings / Absolute maximum ratings

■

Type No. Package Cooling

K3413-05

K3413-08

TO-8

K3413-09

One-stage
TE-cooled

Detector

element

Applications

l

Spectrophotometers

l

Laser monitors

l

Flame monitors

l

Radiation thermometers

Absolute maximum ratings

Active

area

(mm) (mW) (A) (V) (°C) (°C)

Si 2.4 × 2.4 5

InGaAs

f0.5

Si 2.4 × 2.4 5

InGaAs

Si 2.4 × 2.4 5

InGaAs

f1

f1

Thermistor

allowable

dissipation

0.2 1.5

TE-cooler

allowable

current

Reverse

voltage

V

R

20

2

10

Operating

temperature

Topr

Storage

temperature

Tstg

-40 to +70 -55 to +85

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

■

Type No.

K3413-05

K3413-08

K3413-09

Detector

element

Measurement

condition

Element

temperature

T

Peak

sensitivity

wavelength

lp

(°C) (µm) (A/W)

Si 25 0.94 0.45 50 (pA) 100 (pA) 200 1.4 × 10

InGaAs -10 1.55 0.55 0.05 *

Si 25 0.94 0.45 50 (pA) 100 (pA) 200 1.4 × 10

InGaAs -10 2.30 0.60 1.5 (µA) *27.5 (µA) *20.03 7.4 × 10

Si 25 0.94 0.45 50 (pA) 100 (pA) 200 1.4 × 10

InGaAs -10 1.55 0.55 0.07 *

Photo

sensitivity

S

l=lp

Dark

current

VR=10 mV

Typ.

(nA)

1

2

I

D

Max.

(nA)

0.25 *

0.35 *

Shunt

Resistance

Rsh

(MW)

1

3000 1.2 × 10

2

1500 1.2 × 10

*1: VR=5 V

=1 V

*2: V

R

*3: l=655 nm
*4: VR=5 V, RL=50 W
*5: V

=0 V, f=10 kHz

R

D*

l=lp

(cm · Hz

1/2

/W)

13

13

13

10

13

13

Rise time

tr

=0 V

V

R

=1 kW

R

L

10 to 90 %

(ns) (pF)

3

200 *

4

1.5 *

3

200 *

4

23 *

3

200 *

4

7 *

Terminal

capacitance

Ct
=5 V

V

R

f=1 MHz

5

60 *

12

5

60 *

2

200 *

5

60 *

90

1

■ Spectral response

Two-color detector

K3413-05/-08/-09

Si photodiode

0.7

0.6

0.5

0.4

0.3

0.2

PHOTO SENSITIVITY (A/W)

0.1

0

0.2

WAVELENGTH (µm)

■ Dark current vs. reverse voltage

(Typ. Ta=25 ˚C)

1.20.4 0.6 0.8 1.0

KIRDB0199EA

PHOTO SENSITIVITY (A/W)

0.7

0.6

0.5

0.4

0.3

0.2

0.1

InGaAs PIN photodiode

0

0.8

WAVELENGTH (µm)

(Typ. T= -10 ˚C)

K3413-08

K3413-05/-09

2.82.0 2.2 2.4 2.61.0 1.2 1.4 1.6 1.8

KIRDB0212EA

1 nA

100 pA

DARK CURRENT

10 pA

0.01

Si photodiode InGaAs PIN photodiode

(Typ. Ta=25 ˚C)

100.1 1

REVERSE VOLTAGE (V)

KIRDB0200EA

100 µA

10 µA

1 µA

100 nA

10 nA

DARK CURRENT

1 nA

100 pA

0.01 0.1 1 10 100

K3413-08

K3413-09

K3413-05

REVERSE VOLTAGE (V)

(Typ. Ta=25

˚C

)

KIRDB0213EA

2