HAMAMATSU K1713-09, K1713-05, K1713-08 Datasheet

UV TO IR DETECTOR

Two-color detector

K1713-05/-08/-09

Wide spectral response range from UV to IR

K1713 series incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis.

Features

l

Wide spectral response range

l

Allows same optical path design

l

4-pin TO-5 package

General ratings / Absolute maximum ratings

■

Type No. Package Cooling

K1713-05

K1713-08

K1713-09

TO-5 No-cooled

Applications

l

Spectrophotometers

l

Laser monitors

Detector

element

Si 2.4 × 2.4 5

InGaAs

Si 2.4 × 2.4 5

InGaAs

Si 2.4 × 2.4 5

InGaAs

Active

area

(mm) (V) (°C) (°C)

f0.5

f1

f1

Absolute maximum ratings

Reverse

voltage

V

R

Operating

temperature

Topr

20

2

-40 to +70 -55 to +85

10

Storage

temperature

Tstg

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

■

Type No.

Detector

element

Peak

sensitivity

wavelength

lp

Photo

sensitivity

S

l=lp

Dark current

I

D

VR=10 mV

Shunt

Resistance

Rsh

Typ. Max.

(MW)

300

1

300
300

2

3 (kW)

300
100

K1713-05

K1713-08

K1713-09

(µm) (A/W) (nA) (nA)

Si 0.94 0.45 30 (pA) 150 (pA)

InGaAs 1.55 0.55 0.5 *

1

2.5 *

Si 0.94 0.45 30 (pA) 150 (pA)

InGaAs 2.30 0.60 15 (µA) *275 (µA) *

Si 0.94 0.45 30 (pA) 150 (pA)

InGaAs 1.55 0.55 1 *

1

5 *

1

*1: VR=5 V

=1 V

*2: V

R

*3: l=655 nm
*4: VR=5 V, RL=50 W
*5: V

=0 V, f=10 kHz

R

D*

l=lp

(cm · Hz

1.4 × 10

3.5 × 10

1.4 × 10

2.3 × 10

1.4 × 10

3.5 × 10

Rise time

tr

=0 V

V

R

=1 kW

R

L

10 to 90 %

1/2

/W) (ns) (pF)

13

200 *

12

13

10

13

12

1.5 *

200 *

23 *

200 *

7 *

Terminal

capacitance

VR=5 V

f=1 MHz

3

4

3

4

3

4

Ct

60 *

12

60 *

200 *

60 *

90

5

5

2

5

1

■ Spectral response

Two-color detector

K1713-05/-08/-09

Si photodiode

0.7

0.6

0.5

0.4

0.3

0.2

PHOTO SENSITIVITY (A/W)

0.1

0

0.2

WAVELENGTH (µm)

■ Dark current vs. reverse voltage

(Typ. Ta=25 ˚C)

1.20.4 0.6 0.8 1.0

KIRDB0199EA

PHOTO SENSITIVITY (A/W)

0.7

0.6

0.5

0.4

0.3

0.2

0.1

InGaAs PIN photodiode

(Typ. Ta=25 ˚C)

K1713-08

K1713-05/-09

0

0.8

WAVELENGTH (µm)

2.82.0 2.2 2.4 2.61.0 1.2 1.4 1.6 1.8

KIRDB0211EA

1 nA

100 pA

DARK CURRENT

10 pA

0.01

Si photodiode InGaAs PIN photodiode

(Typ. Ta=25 ˚C)

100.1 1

REVERSE VOLTAGE (V)

KIRDB0200EA

100 µA

10 µA

1 µA

100 nA

10 nA

DARK CURRENT

1 nA

100 pA

0.01 0.1 1 10 100

K1713-08

K1713-09

K1713-05

REVERSE VOLTAGE (V)

(Typ. Ta=25

˚C

)

KIRDB0201EA

2