HAMAMATSU H8236-07, H8236-40 Datasheet

HPD (HYBRID PHOTO-DETECTOR) MODULES

PRELIMINARY DATA

H8236-07, -40

OCT. 2000

The HPD (Hybrid Photo-Detector) is a new vacuum photo-detector including a photocathode
and an avalanche diode. The HPD provides a gain of more than 1000 in a single multiplication
process called 'electron bombardment multiplication'. The photoelectrons from the photo­cathode are accelerated by a strong electric field to hit the avalanche diode and release a
large number of electron-hole pairs corresponding to the acceleration energy. This excellent
first multiplication process enables the HPD to achieve excellent multi-photon energy resolu­tion. This first multiplication process is followed by the second avalanche mode multiplication
to provide sufficient gain for a variety of applications.
H8236 is an HPD module, containing high voltage power supplies and a pre-amplifier.

FEATURES

● Able to discriminate multi-photon events

● Low excess noise

● High Q.E. from 450 nm to 650 nm (H8236-40)

● Simple operation

APPLICATIONS

● Photon counting application

● Low intensity pulse detection

● Laser scanning microscope

● Particle counter

Built-in high voltage power supply and pre-amplifier

● Low after pulse

SPECIFICATIONS

Spectral Response

Parameter

Peak Sensitivity Wavelength
Photocathode Material
Quantum Efficiency

E

Effective Area
Sensitivity

A

Bandwidth

Signal Output

Input Power/Current
Recommended Control

Voltage Range
Signal Connector
Control Connector
Weight

Offset (Typ.)
Noise r.m.s. (Typ.)
Load
Impedance

AC coupled

DC coupled
Maximum Voltage
Polarity
To Pre-amplifier (PIN 2)
To Diode Bias Power Supply (PIN 4)
To High Voltage (PIN 8)
To Diode Bias Voltage (PIN 6)

H8236-07

160 to 850

420

Multialkali

15

8

0.2

E

6 mV/1 photoelectron

DC to 3.5 MHz

-0.7
1

more than 50

more than 5

-5

Negative

-12 V dc/6 mA

+12 V dc/50 mA

+3 to +8

+3.5 to +7.6

BNC-R

12-pin connector (Hirose: HR10A-10R-12P)

Approx. 370

B

CD

H8236-40

350 to 720

550

GaAsP(Cs)

40

5

E

0.7

PATENT PENDING

Unit

nm
nm

—
%

mm Min.

V/nW

—
—

V dc

mV

Ω

kΩ

V Max.

—
—

—
V dc
V dc

—

—

g

MAXIMUM RATINGS (Absolute Maximum Value)

Input Power
Control Voltage

PIN 2
PIN 4
PIN 8

PIN 6
Operating Ambient Temperature
Operating Humidity
Average Input Light Power
Peak Input Light Power

A

NOTE:

Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are

subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K

at 8 V (or set the HV knob to -8 kV on the front panel of the HPD module power supply C8237) to PIN 8 and 7.5 V (or set the C8237 diode bias

voltage to +150 V) to PIN 6

B or "-3 kV" to "-8 kV" high voltage on the C8237 front panel
C or "70 V" to "152 V" diode bias voltage on the C8237 front panel
D

The characteristics of the bias voltage vs. avalanche gain curve of the diode inside are affected by the ambient temperature conditions, and even

under the same ambient temperature conditions resulting curve may differ between diodes from different production lots. Refer to the individual
data sheet attached
G

at 3 V (or set the C8237 HV knob to -3 kV) to PIN 8 and 7.5 V (or set the C8237 diode bias voltage to +150 V) to PIN 6. Input light pulse: 50 ns

(FWHM), 200 kHz.

E

EG

to the module

4

380

.

E at peak sensitivity wavelength F without moisture condensation

-12.5
+16

+8.5

D

0 to +40

F

90

1

%RH

105

V dc
V dc
V dc

—
°C

nW
nW

HPD (HYBRID PHOTO-DETECTOR) MODULES H8236-07, -40

Figure 1: Measurement Set-up Example Figure 2: Multi-photoelectron Pulse Height Distribution

TPMOB0110EA

HPD MODULE
H8236-07, -40

HPD MODULE
POWER SUPPLY C8237

1000

SINGLE P.E.

800

600

PIN 8 (HIGH VOLTAGE): 8 V
PIN 6 (DIODE BIAS VOLTAGE): 7.5 V

DOUBLE P.E.

Single
photoelectron

Double p.e.

Triple p.e.

OSCILLOSCOPE

Figure 3: Typical Spectral Response

TPMOB0106EB

3

10

H8236-07

2

10

1

10

QUANTUM EFFICIENCY (%)

0

10

RADIANT SENSITIVITY (mV/nW)

PIN 8 (HIGH VOLTAGE): 8 V
PIN 6 (DIODE BIAS VOLTAGE): 7.5 V

-1

10

300200100 800 900 1000500 600 700400

WAVELENGTH (nm)

H8236-40

RADIANT
SENSITIVITY

QUANTUM
EFFICIENCY

TPMOC0126EA

400

COUNTS PER CHANNEL

200

0

0

Figure 4:

PIN 6: Diode Bias Voltage vs. Radiant Sensitivity

H8236-07

TPMOB0108EA

4

10

3

10

2

10

1

10

0

10

RADIANT SENSITIVITY (mV/nW)

-1

10

3.5

4.0

A

(70)

(80)

H8236-40

TPMOB0109EB

4

10

3

10

TRIPLE P.E.

500

ADC CHANNEL NUMBER

4.5

5.0

5.5

A

A

(100)

A

(90)

(110)

A

6

(120)

A

PIN 6: DIODE BIAS VOLTAGE (V)

1000

PIN 8 : 8 V (-8 kV)
PIN 8 : 5 V (-5 kV)
PIN 8 : 3 V (-3 kV)

6.5

7.0

A

(140)

A

(130)

PIN 8 : 8 V (-8 kV)
PIN 8 : 5 V (-5 kV)
PIN 8 : 3 V (-3 kV)

at 420 nm

B
B
B

7.5

A

(150)

at 550 nm

8.0

B
B
B

2

10

1

10

0

10

RADIANT SENSITIVITY (mV/nW)

-1

10

3.5

4.0

(80)

4.5

A

A

(90)

(100)

(70)

A

PIN 6: DIODE BIAS VOLTAGE (V)

* A: set the C8237 diode bias voltage
B: set the C8237 HV

5.0

5.5

6

6.5

7.0

7.5

A

A

A

A

(110)

(120)

(130)

(140)

A

(150)

8.0

A