HAMAMATSU H7680-01, H7680 Datasheet

Gated PMT Modules

H7680/-01

The H7680/-01 PMT modules are capable of high-speed, high-repetition ga­ted operation. An optimum design in the combination of circuit and photomul­tiplier tube delivers excellent gating characteristics including a minimum gate
width of 30 ns (H7680-01), 100 kHz repetition rate, and a gate extinction ratio
of 10
porating high-voltage power suppy circuit. And, the incorporated PMT gain
can be controled by adjusting the control voltage between +2 V to +5 V.

Product Variations

7

. The H7680/-01 can operate on a low +15 V supply because of incor-

Type No.

H7680
H7680-01

300 nm to 650 nm

Normally ON type
Normally OFF type

Specifications

Parameter

Supply Voltage
Max. Input Voltage
Max. Input Current
Max. Surge Current
Effective Area
Peak Sensitivity Wavelength
Pulse Linearity *
Max. Output Signal Current
Operating Ambient Temperature
Storage Temperature
Weight

Photocathode Material
Window Material
Dynode Structure
Number of Dynodes
Cathode
Character­istics

Anode
Character-

1

istics

*

1

Gain *

Time *1
Response

*1: Control voltage = +4.5 V
*2: Measured at the peak sensitivity wavelength
*3: Measured when photomultiplier tube operation is ON. After 30 minute storage in darkness

52

1

Parameter

Luminous Sensitivity
Radiant Sensitivity *
Blue Sensitivity Index (CS 5-58)
Luminous Sensitivity
Radiant Sensitivity *

Dark Current

Rise Time
Transit Time
TTS

2

2

Ty p.

3

*

Max.

H7680 / H7680-01

+14 to +16

+5 to +40

-20 to +50

H7680 / H7680-01

Bialkali

Borosilicate glass

Linear focused type

4.4 × 10

5 × 10

+17
400

4.0

24

420
100
100

850

10
95
88

11.0
475

10

200

1.7
16

500

FeaturesSpectral Response

Unit

V
V

mA

A

mm

nm
mA

µA
°C
°C

g

Unit

—
—
—

—
µA/lm
mA/W

—

A/lm

5

6

A/W

nA

—

ns

ns

ps

PMT Module with Added Functions

Parameter

Mode
Gate Width (FWHM)
Rise Time, Fall Time

Gate Mode

Repetition Rate
Switching Ratio
Switching Noise

*4

Delay Time
Jitter

Gate Signal
Input

Gain Control

*4: Load resistance 50 Ω, peak to peak

Level
Input Impedance
Pulse Width
Input Voltage
Input Impedance

OFF time: 100 ns to
Max.
Max.

Max.
Max.
Max.

H7680 H7680-01

Normally ON

∞

Normally OFF

ON time: 30 ns to

20

100

7

10

60

200

1

C-MOS (High level: +3.5 V to +5 V)

50

100 ns to ∞

30 ns to ∞

+2.0 to +5.0

10

Characteristics (Cathode radiant sensitivity, Quantum efficiency, Gain)

TPMOB0148EA TPMOB0092EA

100

CATHODE
RADIANT
SENSITIVITY

8

10

7

10

∞

Unit

—
—

ns

kHz

—

mV

ns
ns

—

Ω

—

V

kΩ

10

QUANTUM

1

QUANTUM EFFICIENCY (%)

0.1

CATHODE RADIANT SENSITIVITY (mA/W)

0.01
200 400 600 800

EFFICIENCY

WAVELENGTH (nm)

6

10

5

10

GAIN

4

10

3

10

2

10

1234

CONTROL VOLTAGE (V)

6

5

53